Other

Skhynix Inc.

Merck Patent Gmbh

Changhyun Jin

Myung Sik Choi

Kyu Hyoung Lee

Dong Kyun Lee

Eun Ae Jung

Byeong Il Yang

Hyun Sik Noh

Younghun Byun

Jooyong Kim

Kyoung-Mun Kim

Jae Chul Lee

An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Atomic layer etching method using ligand exchange reaction

According to embodiments of the disclosure, a gold (Au)-embedded triple-layer SnOnanocomposite comprises three layers of SnO—Au—SnO−x (0<x<2), wherein the Au is buried between the SnOand SnO(0<x<2) layers. Also provided is a method for manufacturing the AU-embedded SnOnanocomposite.

Nanocomposite comprising two-dimensional nano thin films formed on AU nanoparticle surface and method for manufacturing same

According to an embodiment, a method for preparing a sea urchin-shaped zinc oxide (ZnO) nanowire comprises preparing a mixture of a ZnO nano-powder and a graphite powder and irradiating the mixture, in a container, with a microwave.

Method for preparing sea urchin-shaped zinc oxide nanowire

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Incheon, South Korea

Changhyun Jin