Han's Laser Technology Industry Group Co., Ltd.

Changhui Zhuang

Wei Zhu

Yunfeng Gao

Jiangang Yin

Fuhai Li

Yanhua Wang

Wei Zeng

Guodong Ma

Zhixian Chen

A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.

Laser processing method, apparatus for sapphire and storage medium

The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer () to form a plurality of cracking points (), the plurality of cracking points () are located on a separating surface (); and exerting, under a temperature of &#x2212;400K to 0K, forces with opposite directions to opposite sides of the wafer (), thereby dividing the wafer () into two pieces along the separating surface ().

Laser lift-off method of wafer

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Shenzhen, China

Changhui Zhuang