Lumileds Lighting U.s., LLC

Other

Hewlett-packard Company

Agilent Technologies, Inc.

Axt, Inc.

Dallan Luming Science & Technology Group Co., Ltd.

Changhua Chen

R Scott Kern

Daniel Alexander Steigerwald

Werner K Goetz

Chihping Kuo

Heng Liu

Paul Scott Martin

Michael David Camras

Stephen Andrew Stockman

Gina L Christenson

James Dong

Shih-Yuan Wang

Yong Qin Chen

Scott W Corzine

Richard P Schneider

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &#x3a9;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Formation of Ohmic contacts in III-nitride light emitting devices

A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.

Light emitting diode

A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active region, which impurities act as a barrier to the degradation process, particularly undesired defect formation and propagation. A preferred embodiment of the present invention uses O doping of III-V optoelectronic devices during an epitaxial growth process to improve the operating reliability of the devices.

Minority carrier semiconductor devices with improved reliability

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Formation of ohmic contacts in III-nitride light emitting devices

A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.

InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire

An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

Epitaxial material grown laterally within a trench and method for producing same

A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED.

In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al,In,Ga,N (0&lE;x&lE;1, 0&lE;y&lE;1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using Al,In,Ga,N (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.

Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices

In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al,In,Gal,N (0&lE;x&lE;1, 0&lE;y&lE;1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using Al,In,Ga,N (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.

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San Jose, CA, United States of America

Changhua Chen