Intel Corporation

Changhong Dai

Qing Ma

Krishna Seshan

Jin Hyung Lee

Harry H Fujimoto

Travis M Eiles

Shiuh-Wuu Lee

Dan Jiao

Mohiuddin M Mazumder

A modeling method is provided that includes receiving a computational model of a structure and slicing the computational model into a plurality of circuit prints. The plurality of slices may include essential circuit prints and backfill circuit prints. Various unknowns may be eliminated between essential circuit prints of the computational model. The unknowns to be eliminated may include volume unknowns and backfill circuit-print unknowns. The numerical system formed by circuit-print unknowns may be divided into a plurality of blocks. The blocks may be solved in turn. One block may be solved by projecting the contributions from other blocks to this block. The solution of the one block may be translated to other blocks to solve unknowns therein. The computational model may then be solved to determine electromagnetic and circuit characteristics of the structure.

Electromagnetic solutions for full-chip analysis

An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Isolation structure configurations for modifying stresses in semiconductor devices

In one embodiment, an interconnect structure may be analyzed to determine electromagnetic characteristics of the structure by identifying structure seeds corresponding to the structure; modeling the structure seeds to obtain field patterns; and processing the field patterns to obtain the electromagnetic characteristics.

Analyzing interconnect structures

Growing community of inventors

San Jose, CA, United States of America

Changhong Dai