L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Changhee Ko

Julien Gatineau

Jean-Marc Girard

Satoko Gatineau

Nicolas Blasco

Clément Lansalot-Matras

Antonio Sanchez

Kazutaka Yanagita

Julien Lieffrig

Hana Ishii

Shingo Okubo

Rocio Alejandra Arteaga Muller

Raphael Rochat

Naoto Noda

Ivan Oshchepkov

To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below RRRGe&#x2014;Co(CO)(1) (where R, Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)RRGe&#x2014;Co(CO)(2) (where Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).

Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof

Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R, R, R, Rand Ris independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R&#x2260;Rand/or Rwhen Rand Rand Rare a hydrocarbon group; (b) Rand Rare a hydrocarbon group when Ris H; or (c) Ris a C2-C4 hydrocarbon group when Rand Rare H.

Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition

Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R, R, R, Rand Ris independently selected from Hydrogen; halogen; linear, cyclic or branched hydrocarbons; primary amino ligands (&#x2014;NHR); or secondary amino ligands (&#x2014;NRR'), with R and R&#x2032; independently being H or a linear, cyclic or branched hydrocarbon, provided at least one of R, R, or Rin Formula I and Ror Rin Formula II is an amino ligand. 

Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(RCp)(L), wherein each R is independently H, an alkyl group, or R'Si, with each R&#x2032; independently being H or an alkyl group; L is selected from the group consisting of formamidinates (N-fmd) or amidinates (NR&#x2033;-amd).

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Vapor deposition of silicon-containing films using penta-substituted disilanes

Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH)&#x2014;X, Ti(AlH)L and Ti(AlH)L. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.

Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules

Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing f{umlaut over (&#x3c5;)}m depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.

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Tsukuba, Japan

Changhee Ko