Lg Display Co., Ltd.

Changeun Kim

Sungjin Kim

Jeongeun Baek

YongGyoon Jang

Sunghee Kim

Sujeong Lee

Jiyeon Kang

Yonggyoon Jang

A color filter substrate and an in-cell touch type display device including the same, in which a low-reflective high-resistance film is disposed on a top face of the color filter substrate. Due to the low-reflective high-resistance film, a finger capacitance is generated, an antistatic path is formed, and reflectance of the display device is improved.

Color filter substrate and in-cell touch type display device including the same

Carbon allotropes, a thin-film transistor array substrate comprising the same, and a display device comprising the same are disclosed. The thin-film transistor array substrate comprising a substrate, a gate electrode on the substrate, a gate insulating film on the gate electrode, an active layer positioned on the gate insulating film and comprising a semiconductor material and a plurality of carbon allotropes, and a source electrode and a drain electrode that make contact with the active layer.

Active layer, thin-film transistor array substrate comprising the same, and display device comprising the same

A carbon allotrope and a display device including the same are disclosed. The thin-film transistor array substrate, comprising a substrate, a gate electrode on the substrate, an active layer comprising a first active layer, which opposes the gate electrode and is adjacent to the gate electrode thereby comprising a semiconductor material and a plurality of carbon allotropes, and a second active layer, which is in contact with the first active layer and comprises a semiconductor material, a gate insulating film between the gate electrode and the active layer, and a source electrode and a drain electrode respectively in contact with the active layer.

Array substrate for thin-film transistor and display device of the same

A thin-film transistor array substrate and a display device are disclosed. The thin-film transistor array substrate includes a substrate, a gate electrode disposed on the substrate, an active layer, which opposites the gate electrode, has a first region and a second region having different thicknesses, and comprises at least a semiconductor material, a gate insulating film interposed between the gate electrode and the active layer, and a source electrode and a drain electrode, which are respectively in contact with the active layer.

Growing community of inventors

Gunpo-si, South Korea

Changeun Kim