Shenzhen China Star Optoelectronics Technology Co., Ltd.

Changcheng Lo

Chong Huang

Yewen Wang

Wenhui Li

Yawei Liu

Chihyuan Tseng

Yifan Wang

Yutong Hu

Wei Wei

Yuanchun Wu

Weifeng Chen

Pangling Zhang

Yuanjun Hsu

Weijing Zeng

Chengling Lv

Meng Zhang

Liangfen Zhang

Shuichih Lien

Hoising Kwok

Man Wong

Rongsheng Chen

The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (), and forming the polysilicon thin film () on the substrate (), and a thickness of the polysilicon thin film () accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.

Manufacture method of polysilicon thin film and polysilicon TFT structure

A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. An isolation layer with a flat top surface is sandwiched between a transparent electrode and a pixel electrode to form a transparent capacitor.

Pixel structure having high aperture ratio and circuit

A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. A transparent electrode, a pixel electrode and a flat isolation layer sandwiched between the transparent electrode and the pixel electrode construct a transparent capacitor.

The present invention provides an OLED touch control display device and a manufacture method thereof. The OLED touch control display device comprises: a transparent substrate (), a transparent package cover plate (), an OLED thin film element () located at one side of the transparent substrate () facing the transparent package cover plate (), a thin film package layer () being located on the OLED thin film element () and completely covering the OLED thin film element (), a transparent conductive outer layer () located on the thin film package layer (), an antiglare layer () located at one side of the transparent package cover plate () facing the transparent substrate (), a transparent conductive inner layer () located under the antiglare layer () and a transparent isolation dot layer () located under the transparent conductive inner layer (); the transparent conductive outer layer (), the transparent isolation dot layer () and the transparent conductive inner layer () construct a touch control panel (); the OLED touch control display device reduces the difficulty of the manufacture process and contributes to raise the productivity.

OLED touch control display device and manufacture method thereof

The present invention provides an OLED packaging method and structure. The method includes the following steps: providing an OLED substrate () and a package cover () and forming an alignment mark on the package cover (); forming a circle of patternized desiccant layer () on the package cover (); coating a circle of frame resin () on the package cover () at an outer side of the desiccant layer (); attaching the package cover () and the OLED substrate () to each other; and subjecting the frame resin () to irradiation of a UV light source or heating for curing so as to complete packaging of the OLED substrate () with he package cover ().

OLED packaging method and structure

Disclosed is a method for manufacturing an LED light bar and an LED light bar thereof. The method includes: providing a metal substrate and a plurality of LED lights; forming a graphene layer on the metal substrate in such a way that the graphene layer includes hollow sections formed to correspond to the LED lights; mounting the LED lights to the metal substrate in the hollow sections; and forming silicone layers in the hollow sections. The LED light bar includes a graphene layer formed on a metal substrate and silicone layers are provided for planarization and heat transfer so as to effectively enhance heat dissipation performance of the LED light bar and extend lifespan of the LED light bar.

Method for manufacturing LED light bar and LED light bar thereof

The invention provides a color display device structure, including a substrate (), an anode (), a thin film transistor array (), a hole injection layer (), a hole transport layer (), a light emitting layer (), an electron transport layer (), a cathode (), a cover plate (), a color conversion layer () formed on the inner side of the cover plate (), and a sealant (). The light emitting layer () is a blue and green light emitting layer (). The color conversion layer () includes a blue filter unit (), a green filter unit () and a red conversion unit () separated one another. The blue light and the green light emitted by the blue and green light emitting layer () is filtered to become blue light by the blue filter unit (). The blue light and the green light emitted by the blue and green light emitting layer () is filtered to become green light by the green filter unit (). The blue light and the green light emitted by the blue and green light emitting layer () is converted to red light by the red conversion unit (). The color display is achieved by the color display device structure. The color display device structure is manufactured by a simple production process, and has the features of high color purity, good emitting efficiency, high stability, ultra-thin, and so on.

Color display device structure

The present invention provides a method for manufacturing an LED light bar and an LED light bar thereof. The method includes (1) providing a metal substrate () and a plurality of LED lights (); (2) forming a graphene layer () on the metal substrate () in such a way that the graphene layer () includes hollow sections () formed to correspond to the LED lights (); (3) mounting the LED lights () to the metal substrate () in the hollow sections (); and (4) forming silicone layers () in the hollow sections (). The method for manufacturing the LED light bar and the LED light bar thereof according to the present invention use a graphene layer formed on a metal substrate and use silicone layers for planarization and heat transfer so as to effectively enhance heat dissipation performance of the LED light bar and extend lifespan of the LED light bar.

The present invention provides a backlight module, which includes: a backplane (), a light guide plate () arranged in the backplane (), a backlight source () mounted on the backplane (), and a heat dissipation film () mounted on the backplane (). The heat dissipation film () is made of graphene and has a thickness of 0.01-0.05 mm. The backlight module of the present invention provides includes a graphene-made heat dissipation film formed on a backplane to effectively improve the heat dissipation performance of the backlight module, allowing thermal energy to be uniformly distributed on the entire surface of the heat dissipation film in the plane direction to eliminate localized hot spots. Further, the graphene material is light-weighted so that addition of the heat dissipation film made of graphene does not significantly increase the weight of the backlight module.

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Guangdong, China

Changcheng Lo