Seoul Viosys Co., Ltd.

Seoul Opto Device Co., Ltd.

Seoul Semiconductor Co., Ltd.

Chang Youn Kim

Joon Hee Lee

Jong Kyun You

Hwa Mok Kim

Jong Min Jang

Won Cheol Seo

Yeo Jin Yoon

Jong Kyu Kim

Jin Cheol Shin

Hong Chol Lim

Jang Woo Lee

Kyoung Wan Kim

Shiro Sakai

Jae Hee Lim

Soo Young Moon

Jin Cheul Shin

Kyung Hee Ye

Chae Hon Kim

Sum Geun Lee

Yun Goo Kim

Ki Bum Nam

Dae Sung Kal

Hong Jae Yoo

Kyung Wan Kim

Jun Ho Yun

Sung Hoon Hong

Joon Hee Kim

A light emitting device including a printed circuit board having a front surface and a rear surface, at least one light emitting source disposed on the front surface to emit light in a direction away from the printed circuit board, and a molding layer surrounding the light emitting source, in which the light emitting source includes a light emitting structure, a substrate disposed on the light emitting structure, and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board, the molding layer covers an upper surface of the substrate and a fine concavo-convex part is formed on a surface of the molding layer exposed to the outside, and the molding layer has a first thickness to transmit at least a fraction of light emitted from the light emitting source, and includes a filler to change a direction of emitted light.

Light emitting device package and application thereof

A display device including a circuit board, and pixels each including a light emitting structure including epitaxial stacks and having a light emitting area defined by the epitaxial stacks, an encapsulating member covering a side surface and an upper surface of the light emitting structure, bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, and fan-out lines disposed on the encapsulating member and electrically connected to the light emitting structure through the bump electrodes, in which at least a first portion of a surface of the fan-out lines is exposed to the outside to receive electrical signal for independent driving of the light emitting structure, and the first portion of the fan-out lines does not overlap the light emitting area in a plan view.

Light emitting device package and display device having the same

A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

Light emitting diode having side reflection layer

A light emitting device module including a printed circuit board, upper and lower electrodes disposed on opposing surfaces of the printed circuit board, light emitting devices configured to emit light in a direction away from the printed circuit board, and a molding layer surrounding the light emitting devices, in which each light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and bump electrodes disposed between the light emitting structure and the printed circuit board, the molding layer covers side surfaces of the substrates, a number of the lower electrodes is less than a number of the bump electrodes of the plurality of light emitting devices, and each of the light emitting devices is configured to be driven independently.

A light emitting device package including a substrate, a light emitting structure including a plurality of epitaxial stacks sequentially stacked on the substrate configured to emit light having different wavelength bands from each other, the light emitting structure having a light emitting area defined by the epitaxial stacks, a plurality of bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, a molding layer covering a side surface and an upper surface of the light emitting structure, a plurality of fan-out lines disposed on the molding layer and connected to the light emitting structure through the bump electrodes, and an insulating layer disposed on the fan-out lines and exposing a portion of the fan-out lines, in which the exposed portion of the fan-out lines does not overlap with the light emitting area.

A light emitting device package including a printed circuit board having a front surface and a rear surface, at least one light emitting device disposed on the front surface and emitting light in a direction toward the front surface, and a molding layer disposed on the printed circuit board and surrounding the light emitting device, in which the light emitting device includes a light emitting structure disposed on the printed circuit board, a substrate disposed on the light emitting structure, and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board, and the molding layer may cover an upper surface of the substrate and partially reflect, scatter, or absorb external light.

A light emitting device package including a printed circuit board having a front surface and a rear surface, at least one light emitting device disposed on the front surface and emitting light in a direction toward the front surface, and a molding layer disposed on the printed circuit board and surrounding the light emitting device, in which the light emitting device includes a light emitting structure disposed on the printed circuit board, a substrate disposed on the light emitting structure, and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board, and the molding layer covers an upper surface of the substrate and includes a fine concavo-convex part formed on a surface of the molding layer exposed to the outside.

A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 &#x3bc;m or more.

Disclosed is a light emitting diode including a side reflection layer. The light emitting diode includes a substrate having a side surface and an upper surface; a semiconductor stack disposed under the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an ohmic reflection layer electrically connected to the second conductivity type semiconductor layer; a first bump pad disposed under the ohmic reflection layer and electrically connected to the first conductivity type semiconductor layer; a second bump pad disposed under the ohmic reflection layer and electrically connected to the second conductivity type semiconductor layer; a side reflection layer covering the side surface of the substrate; and a capping layer covering the upper surface of the substrate and the side reflection layer.

A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

High efficiency light emitting diode and method for fabricating the same

Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Light emitting device and method of fabricating the same

A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.

Growing community of inventors

Ansan-si, South Korea

Chang Youn Kim