Samsung Electronics Co., Ltd.

Samsung Electro-Mechanics Co., Ltd.

Samsung Led Co., Ltd.

Chang-youl Moon

Kyu-ho Shin

Su-ho Shin

Chang-seung Lee

Soon-cheol Kweon

Ki-hwan Kwon

Jeong-yub Lee

Yong-young Park

Yong-sung Kim

Moon-chul Lee

Joo-ho Lee

Jun-sik Hwang

Xianyu Wenxu

Seung-tae Choi

Woon-bae Kim

Jae-woo Chung

Hwa-sun Lee

Wenxu Xianyu

Tae-kyung Lee

Woo-young Yang

Jong-oh Kwon

Jae-ho Moon

Seung-mo Lim

Ji-Hyuk Lim

Suk-jin Ham

Yeon-Hee Kim

Arthur Darbinian

Min-Soo Kim

Young-Ho Kim

Eun Sung Lee

Jin-Seung Sohn

Sung-Hee Lee

Yoon-sun Choi

In-jun Hwang

Kyu-Dong Jung

Jung-mok Bae

Jin-seung Choi

Seong-taek Lim

Seung-Tae Choi

Jun-hee Choi

Eun-hyoung Cho

Yoon-chul Son

Tae-sik Park

Eok-su Kim

Kyo-yeol Lee

Yong-jun Kim

Ki-deok Bae

Byeong-cheon Koh

Jun-seong Kim

Yong-Seok Jung

Ji-hyuk Lim

Won-kyoung Choi

Chang-Woo Lee

Kukjin Chun

Woo-Young Yang

Oh-Hyun Beak

Hee-ra Roh

Chang-yul Oh

Kyu-yeol Lee

Tao-kyung Lee

Chan-bong Jeon

Oh-keun Kwon

A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Semiconductor device and manufacturing method of semiconductor device using metal oxide

A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate

A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Graphene devices and methods of manufacturing the same

Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.

Transistors and methods of manufacturing the same

Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene

The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Methods of transferring semiconductor elements and manufacturing semiconductor devices

A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Methods of transferring graphene and manufacturing device using the same

In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths.

Electrowetting device and method of manufacturing the same

A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.

Graphene device and method of manufacturing the same

An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.

Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same

A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Graphene device manufacturing apparatus and graphene device manufacturing method using the apparatus

An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED.

LED package structure and manufacturing method, and LED array module

Growing community of inventors

Suwon-si, South Korea

Chang-youl Moon