Brookhaven Science Associates, Lcc

The State University of New York

The University of Texas System

Chang-Yong Nam

Nikhil Tiwale

Charles Thomas Black

Robert Grubbs

Aaron Stein

Jiyoung Kim

Ming Lu

Su Min Hwang

Ashwanth Subramanian

Jovan Kamcev

Kim Kisslinger

A resistive random access memory (RRAM) device includes a plurality of memory cells, each of at least a subset of the memory cells including first and second electrodes and an organic thin film compound mixed with silver perchlorate (AgClO) salt as a base layer that is incorporated with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI), the base layer being formed on an upper surface of the first electrode and the second electrode being formed on an upper surface of the base layer. Resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClOsalt in the base layer. A variation of device switching parameters is controlled as a function of an amount of infiltrated metal oxide molecules in the base layer.

Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory device

The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.

Inorganic-infiltrated polymer hybrid thin film resists for advanced lithography

Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.

Patterning by area selective oxidation

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Stony Brook, NY, United States of America

Chang-Yong Nam