Nuvoton Technology Corporation

Chang-Xian Wu

Bal S Sandhu

Chun-Ku Lin

Paul Vande Voorde

A floating-node memory device includes a metal-oxide-semiconductor (MOS) transistor including a first polysilicon gate, a source region, and a drain region in a first well region, a tunneling device including a second polysilicon gate in a second well region, and a metal-insulator-metal (MIM) capacitor including a conductive top plate and a bottom plate formed in a metal interconnect layer. The floating-node device includes a floating-node comprising the first polysilicon gate, the second polysilicon gate, and the conductive top plate of the MIM capacitor coupled together, a control node at the bottom plate of the MIM capacitor, an erase node in the second well region, a source node at the source region of the MOS transistor, and a drain node at the drain region of the MOS transistor.

Method and apparatus for analog floating gate memory cell

An amplifier circuit includes an amplifier and an output transistor. The amplifier is coupled to an output node of the output transistor for providing an output voltage to a load device. The amplifier circuit also includes a slew-rate control circuit coupled to a gate node of the output transistor and configured to control voltage rise of the gate node of the output transistor during power-up to reduce output voltage overshoot.

Method and apparatus for reducing power-up overstress of capacitor-less regulating circuits

A band gap reference voltage generating circuit includes a reference voltage generating circuit, a current generating circuit, a current divider circuit, and a first connection path switching circuit. The reference voltage generating circuit forms a reference voltage on first and second current input terminals thereof. First and second input terminals of the current generating circuit are connected to the first and second current input terminals, respectively. The current generating circuit generates a first current to bias the reference voltage generating circuit. The current divider circuit includes a current input terminal, a first current output terminal, and a second current output terminal. The first connection path switching circuit switches connection paths between the first input terminal and the second input terminal of the current generating circuit, and the first current input terminal and the second current input terminal of the current divider circuit.

Band gap reference voltage generating circuit

An integrated circuit includes a current detection circuit configured for coupling to an output terminal of a voltage regulator, the output terminal providing a total current that is divided into a load current to a load device and a feedback current for providing a feedback signal to the voltage regulator. The current detection circuit includes a current sampling circuit and a current comparator circuit. The current sampling circuit provides a first current that is proportional to the total current, a second current that is proportional to the feedback current, and a third current that is proportional to the load current. The current comparator circuit is configured to compare the third current with a threshold current, and output a detection signal that indicates whether the third current matches the threshold current, thereby indicating a target load device is detected.

Audio microphone detection using auto-tracking current comparator

An output driver for an audio system includes a pre-charge circuit. The pre-charge circuit includes a charging amplifier and a feedback bias circuit. A charging amplifier includes an output node for coupling to a capacitive load, a first input node for receiving a reference voltage, a second input node for coupling to the output node of the charging amplifier, and a bias node for receiving a bias current. An output current of the charging amplifier varies with the bias current. The feedback bias circuit is coupled to the output node to sense an output voltage of the charging amplifier, and configured to provide the bias current that varies with the output voltage of the charging amplifier.

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San Jose, CA, United States of America

Chang-Xian Wu