Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Sl Mirrortech Corporation

Chang Woo Sohn

Dong Hun Lee

Dong Il Bae

Seung Min Song

Jung Gil Yang

Seung Hyun Song

Young Chai Jung

Keun Hwi Cho

Seon-Bae Kim

Sa Hwan Hong

Sang Won Baek

Min Cheol Oh

Dongwoo Kim

Sang Hoon Lee

Min Soo Kim

Kyungin Choi

Jin Woo Kim

Yong Hwan Kim

Kwan Hui Kang

Youngmoon Choi

Ill Soo Kim

Young Hoon Lee

Young Nam Shin

Choon Gi Jung

Dong Gun Yeo

Hyun Seok Song

Dae Man Son

Hyung Sik Yoon

Soo Man Jung

Young Bum Cho

A vehicle control apparatus includes a processor, a forward detection device configured to identify an external object in front of the vehicle, a door handle driving device configured to control a position of a door handle relative to a door part of the vehicle, and a collision detection device configured to identify whether there is a collision of the vehicle. The processor is configured to identify whether a first signal is received from the forward detection device based on a speed of the vehicle and a distance between the vehicle and the external object, to transmit a second signal to the door handle driving device for moving the door handle to a first position outward relative to the door part, and to maintain a state where the door handle is at the first position based on receiving a third signal from the collision detection device.

Vehicle control apparatus and method thereof

A semiconductor device includes first and second isolation regions, a first active region extending in a first direction between the first and second isolation regions, a first fin pattern on the first active region, nanowires on the first fin pattern, a gate electrode in a second direction on the first fin pattern, the gate electrode surrounding the nanowires, a first source/drain region on a side of the gate electrode, the first source/drain region being on the first active region and in contact with the nanowires, and a first source/drain contact on the first source/drain region, the first source/drain contact including a first portion on a top surface of the first source/drain region, and a second portion extending toward the first active region along a sidewall of the first source/drain region, an end of the first source/drain contact being on one of the first and second isolation regions.

Semiconductor device

A camera monitor system for responding to an amount of light includes: a sensor unit configured to measure an amount of external light of a vehicle; a camera unit configured to capture an image of an outside of the vehicle; a display unit comprising a first display layer configured to display the image of the outside, captured by the camera unit, and a second display layer configured to display at least one icon at least partially overlapping the first display layer; and a controller configured to set luminance of the first display layer in response to the amount of external light received from the sensor unit and to change transparency of the icon of the second display layer.

Camera monitor system for responding to amount of light

A vehicle door opening and closing control system may include an antenna provided at a vehicle, the antenna being configured to wirelessly communicate with a user's mobile device to recognize the location of the user's mobile device, a door opening and closing device configured to open or close a door of the vehicle, a rain sensor configured to detect a rainy weather state outside the vehicle, and a controller configured to control the operation of the door opening and closing device based on the location of the mobile device recognized by the antenna or the rainy weather state outside the vehicle detected by the rain sensor.

Vehicle door opening and closing control system and method based on weather state detected by rain sensor

A vertical field-effect transistor (VFET) includes: a fin structure on a substrate; a gate structure including a gate dielectric layer on an upper portion of a sidewall of the fin structure, and a conductor layer on a lower portion of the gate dielectric layer; a top source/drain (S/D) region above the fin structure and the gate structure; a bottom S/D region below the fin structure and the gate structure; a top spacer on an upper portion of the gate dielectric layer, and between the top S/D region and a top surface of the conductor layer; and a bottom spacer between the gate structure and the bottom S/D region. A top surface of the gate dielectric layer is positioned at the same or substantially same height as or positioned lower than a top surface of the top spacer, and higher than the top surface of the conductor layer.

Gate structure of vertical FET and method of manufacturing the same

A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

Semiconductor device and method for fabricating the same

Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

A vertical field-effect transistor (VFET) device and a method of manufacturing the same are provided. The VFET device includes: a fin structure formed on a substrate; a gate structure including a gate dielectric layer formed on an upper portion of a sidewall of the fin structure, and a conductor layer formed on a lower portion of the gate dielectric layer; a top source/drain (S/D) region formed above the fin structure and the gate structure; a bottom S/D region formed below the fin structure and the gate structure; a top spacer formed on an upper portion of the gate dielectric layer, and between the top S/D region and a top surface of the conductor layer; and a bottom spacer formed between the gate structure and the bottom S/D region. A top surface of the gate dielectric layer is positioned at the same or substantially same height as or positioned lower than a top surface of the top spacer, and higher than the top surface of the conductor layer.

A method for manufacturing a semiconductor device includes forming a fin structure extending in a first direction on a substrate, forming a sacrificial gate pattern extending in a second direction to intersect the fin structure, forming a gate spacer layer covering the fin structure and the sacrificial gate pattern, providing a first ion beam having a first incident angle range and a second ion beam having a second incident angle range to the substrate, patterning the gate spacer layer using the first ion beam and the second ion beam to form gate spacers on sidewalls of the sacrificial gate pattern, forming source/drain regions at both sides of the sacrificial gate patterns, and replacing the sacrificial gate pattern with a gate electrode.

Method for manufacturing a semiconductor device

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Hwaseong-si, South Korea

Chang Woo Sohn