Other

Samsung Display Co., Ltd.

Chang Woo Byun

Yong Woo Lee

Se Wan Son

Jong Woo Park

Woo Chang Lim

Young Tae Choi

Seung Ki Joo

Hyun Mo Kang

Sang Joo Lee

Seol Ah Park

Seung Jae Yun

Shangu Kim

Tao Li

A display device includes a substrate including a display area and a non-display area adjacent to the display area, lower pads disposed in the non-display area of the substrate and spaced apart from each other, upper pads disposed on the lower pads and spaced apart from each other, an anisotropic conductive film disposed between the lower pads and the upper pads, and a circuit film disposed on the upper pads, the circuit film including first lower holes disposed between the upper pads in a plan view, and first upper holes connected to the first lower holes and having radiuses larger than radiuses of the first lower holes. The first upper holes form first openings on an upper surface of the circuit film. A method of manufacturing the display device is provided.

Display device and method of manufacturing the same

Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same

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Hwaseong-si, South Korea

Chang Woo Byun