Samsung Electronics Co., Ltd.

Chang-Won Hwang

Byung-Hoo Jung

Byung-Seong Bae

Woo-Suk Chung

Joo-hyung Lee

Mun-Pyo Hong

Yong-suk Jin

Chan-Joo Youn

Joo-Hyung Lee

Dong-Hwan Kim

Hyun-Jae Kim

Tae-Hyeong Park

Sook-Young Kang

Gyu-Sun Moon

In a TFT LCD device comprising a substrate, at least one thin film transistor formed on the substrate, having a source electrode and a drain electrode, an insulating layer formed over the whole surface of the substrate on which the thin film transistor is formed, having at least one contact hole exposing a portion of the drain electrode, and reflective layer pixel electrode corresponding to the thin film transistor, formed on the insulating layer to be connected with the drain electrode through the contact hole, the pixel electrode is formed of a multi-layered conductive layer. The drain electrode is composed of multiple layers, and the most upper layer of the multiple layers is one selected from a Cr layer and a MoW layer. Preferably, the multi-layered conductive layer is composed of two-layered conductive layer having a lower layer of the same material as that of the most upper layer and an upper layer of Al-containing metal.

TFT LCD device having multi-layered pixel electrodes

A thin film transistor (TFT) array panel includes: an insulating substrate (); first and second semiconductor members () formed on the substrate and having opposite conductivity; a first gate member () formed on a first layer (), insulated from the first and the second semiconductor members and overlapping one of the first and the second semiconductor members; a second gate member () formed on the first layer (), separated from the first gate member, and insulated from the first and the second semiconductor members (), the second gate member () not overlapping the first and the second semiconductor members; a first data member () formed on a second layer (), connected to one of the first and the second semiconductor members () and insulated from the first () and the second () gate members; and a first connection () formed on the second layer () and connecting the first gate member () and the second gate member ().

Thin film transistor array panel and manufacturing method thereof

A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.

Method for manufacturing a liquid crystal display

Liquid crystal display having a source electrode and a metal pattern for a storage capacitor formed on an insulating substrate

A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. The TFT comprises an active pattern formed on a substrate, a gate insulating layer formed on the substrate including the active pattern, a gate line formed on the gate insulating layer to be crossed with the active pattern and including a gate electrode for defining the first impurity region, a second impurity region and a channel region, an insulating interlayer formed on the gate insulating layer including the gate line, a data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole which is formed through the gate insulating layer and the insulating interlayer on the second impurity region and a pixel electrode formed on the same insulating interlayer as the data line and connected with the first impurity region through a second contact hole which is formed through the gate insulating layer and the insulating interlayer on the first impurity region. The number of mask can be reduced to 5 or 6 sheets, thereby simplifying a manufacturing process.

Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof

Liquid crystal display and a method for manufacturing the same

Liquid crystal displays and manufacturing methods thereof the interlayer insulating film having a thinner depth

A double level gate layer with an undercut lower gate layer can be formed by using the etching rate difference between the upper gate layer and the lower gate layer in a polycrystalline Si type TFT LCD that has P-channel TFTs and N-channel TFTs. An LDD structure can be easily formed by using an upper gate layer as ion implant mask during the N-type ion implantation. LDD size is decided by the skew size between the upper gate layer and the lower gate layer. Furthermore, a photolithography step necessary for masking the ion implantation can be skipped.

Method for forming a TFT in a liquid crystal display

The present invention is related to the method of forming thin film transistor that can be used for flat display devices wherein a method of making TFT for display devices have the steps of, forming subsidiary conductor patterns connecting plurality of electrically isolated conductor patterns, implanting impurity ions utilizing the conductor patterns and subsidiary conductor patterns as implantation mask and removing the subsidiary conductor patterns.

Method of forming thin film transistor

Liquid crystal displays, manufacturing methods and a driving method thereof

Thin film transistor-liquid crystal display and a manufacturing method thereof

The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

Growing community of inventors

Kyungki-do, South Korea

Chang-Won Hwang