Samsung Electronics Co., Ltd.

Goldstar, Co., Ltd.

Ctlab Co. Ltd.

Chang Tae Kim

Young Soo Kwon

Sang Hoon Kim

Ki Won Kim

Chang Hun Lee

Sang Woo Bae

Yeo Jin Kim

Jin Hee Shin

Seok Jung Kim

Hee Jun Ryu

Sung Bin Hong

Jae Sung Ko

An electronic device according to an embodiment may comprise: a speaker, an amplifier connected to the speaker through a first electrical path; and at least one processor electrically connected to the amplifier, wherein the at least one processor is configured to: provide a first audio signal set to a first volume level to the speaker via the amplifier; when the first volume level is less than a predetermined first value, output the first audio signal at the first volume level through the speaker; and when the first volume level is equal to or greater than the first value, control a volume level of the first audio signal on the basis of a temperature value of the speaker, which is estimated from the first audio signal.

Electronic device comprising speaker

The present disclosure relates to a method for manufacturing a semiconductor device structure, comprising the steps of: securing the position of a semiconductor device on a plate; securing the positions of electrodes such that the electrodes face the plate; covering the semiconductor device with an encapsulating material; and separating, from the plate, the semiconductor device covered with the encapsulating material.

Semiconductor device structure

A method of making a FET includes the steps of forming a source and a drain at respective edges of the surface of a semiconductor substrate, forming a first insulation film on the whole surfaces of the semiconductor substrate, the source, and the drain, coating a photoresist on the first insulation film, patterning the photoresist using a photolithography process to form a photoresist pattern having a first space corresponding to a gate length between the source and the drain, forming a second insulating film on the whole surfaces of the exposed first insulation film and the photoresist pattern, etching the second insulation film to form sidewall insulation films at the sidewalls of the photoresist patterns, etching the first insulation film using the sidewall insulation films and the photoresist pattern as an etching mask to form first insulation film patterns, which form a second space having a width smaller than that of the first space, beneath the first space, removing the sidewall insulation films to form a T-shaped space, and depositing a conductor to form a T-shaped gate in the T-shaped space.

Method of making a field effect transistor

A field effect transistor is disclosed in which a source region and a drain region are formed to be reverse mesa on a semi-insulating semiconductor substrate with an insulating layer thereon by using a crystal growth characteristic corresponding to the crystal orientation. A channel layer and a gate electrode are formed by self-alignment on the upper part of a void formed according to the reverse mesa of the source and the drain regions, so that the channel layer and the semiconductor substrate are electrically separated by the void. By such a construction, a leakage current and backgating effect are removed, and a fast field effect transistor is attained owing to the reduction of an effective channel length and a gate resistance.

Floating channel field effect transistor and a fabricating method thereof

Growing community of inventors

Gyeonggi-do, South Korea

Chang Tae Kim