Samsung Electronics Co., Ltd.

Chang-Sup Mun

Woo-Gwan Shim

Doo-Won Kwon

Hyung-Ho Ko

Sang-jun Choi

Chang-ki Hong

Ki-Hyun Hwang

Kyung-Hyun Kim

Jeong-Nam Han

Chang-Ki Hong

Im-Soo Park

Yu-Kyung Kim

Han-Mei Choi

Sung-Jun Kim

Jung-Hyun Park

Han-Ku Cho

Kun-Tack Lee

Woo-Sung Han

Suk-Hun Choi

Ji-Hoon Cha

Byoung-Moon Yoon

Dong-Chul Yoo

Hyo-Jung Kim

Jong-Heun Lim

Chan-Jin Park

Won-Jun Jang

Jin-I Lee

Myung-Jung Pyo

Jae-Young Ahn

Ho-wook Choi

Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.

Methods of manufacturing semiconductor devices

In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.

Method of manufacturing gate structure and method of manufacturing semiconductor device including the same

A capacitor includes an object or a substrate including an insulation layer having an opening, an electrode structure having conductive patterns, a dielectric layer and an upper electrode. The electrode structure may have a first conductive pattern including metal and a second conductive pattern including metal oxide generated from the first conductive pattern. The first conductive pattern may fill the opening and may protrude over the insulation layer. The second conductive pattern may extend from the first conductive pattern. The electrode structure may additionally include a third conductive pattern disposed on the second conductive pattern. The capacitor including the electrode structure may ensure improved structural stability and electrical characteristics.

Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure

This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture

A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.

Method of forming fine pitch hardmask patterns and method of forming fine patterns of semiconductor device using the same

Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

Cleaning solution of silicon germanium layer and cleaning method using the same

A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NHOH), hydrogen peroxide (HO), and deionized water (HO), and the second cleaning solution comprises at least 200 times more deionized water (HO) than ammonium hydroxide (NHOH) by volume.

Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device

A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO&#x2014;HAwherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.

Cleaning composition and method of cleaning a semiconductor device using the same

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Suwon-si, South Korea

Chang-Sup Mun