Lg Chem, Ltd

Chang Sun Eun

Chan Yeup Chung

Dae Sung Kim

Jung Min Ko

Sung Soo Lee

Ho Rim Lee

Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (C) defined by Equation (1) below is less than &#x2212;0.37, wherein a SiC single crystal is formed by a solution method:&#x2212;&#x3bc;&#x2003;&#x2003;Equation (1)in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, &#x3bc;1 is a constant of &#x2212;5.422, and &#x3bc;2 is a constant of &#x2212;9.097.

Silicon-based molten composition and manufacturing method of SiC single crystal using the same

The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70&#x2264;Csisol&#x2264;1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1):Csisol=+&#x3bc;1&#x2212;&#x3bc;2&#x2003;&#x2003;Equation (1)

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Daejeon, South Korea

Chang Sun Eun