Samsung Electro-mechanics Co., Ltd.

Chang Soo Jang

Jeong Hoon Ryou

Seung Mo Lim

Tae Joon Park

Hyun Ho Shin

In Hyuk Song

Jae Hoon Park

Yun Hee Kim

Byeong Cheol Moon

Jung Min Kim

No Il Park

Seung Hun Han

Jeong Suong Yang

Kee Ju Um

Sung Min Cho

Dong Sik Yoo

Kyo Yeol Lee

Dong Woo Seo

Woong Do Jung

Ho Phil Jung

Young Kyu Park

Su Ji Kang

Mun Seong Jeong

Jin Kyung Park

Na Young Kim

A multilayer electronic component includes a body including a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction and a cover portion disposed on one surface and the other surface of the capacitance forming portion in the first direction, and external electrodes disposed on the body, wherein a secondary phase including Al is disposed at an interface between the internal electrode and the dielectric layer, and the ratio of an area occupied by the secondary phase to an area of the capacitance forming portion is 0.03% or more and 0.40% or less.

Multilayer electronic component

A capacitor component includes: a semiconductor substrate including first and second portions, a trench penetrating through the substrate from one surface of the substrate to the other surface of the substrate to separate the first and second portions of the substrate from each other, a dielectric layer disposed in the trench and on the one surface of the substrate; a first pad electrode and a second pad electrode spaced apart from each other, and penetrating through the dielectric layer to be in contact with the first and second portions of the substrate, respectively, and a passivation layer disposed on the dielectric layer, covering portions of the first pad electrode and the second pad electrode, and exposing at least a portion of each of the first pad electrode and the second pad electrode.

Capacitor component

A capacitor includes a structure including a plurality of openings penetrating from a first surface of the structure to a second surface opposing the first surface; a capacitor layer disposed on the second surface of the structure and in the plurality of the openings and including a dielectric layer, and a first electrode and a second electrode, the dielectric layer interposed between the first electrode and the second electrode; a first connection layer disposed on the first surface of the structure and connected to the first electrode; a second connection layer disposed on the capacitor layer on the second surface and connected to the second electrode of the structure; and first and second terminals disposed on opposite side surfaces of the structure and connected to the first connection layer and the second connection layer, respectively.

Capacitor and method of manufacturing the same

A capacitor component includes a porous body, a first electrode layer covering surfaces of pores of the porous body, a dielectric layer covering the first electrode layer, and a second electrode layer filling the pores of the porous body and covering the dielectric layer.

Provided is a capacitor including a substrate including first and second trenches spaced apart from each other, a first electrode disposed in the first trench and one surface of the substrate, a second electrode disposed in the second trench and on the one surface of the substrate and spaced apart from the first electrode, first and second pad electrodes arranged on the first and second electrodes, respectively, and a passivation layer disposed on the first and second pad electrodes and having openings partially exposing the first and second pad electrodes, respectively.

A capacitor component includes a dielectric including a first main surface and a second main surface facing each other, and at least one end surface that connects the first main surface and the second main surface, the dielectric being vertically disposed by positioning the at least one end surface on a lower surface of the capacitor component, and a first electrode and a second electrode that are disposed on the first main surface and the second main surface of the dielectric, respectively, wherein a size of each of the first electrode and the second electrode is greater than a size of the dielectric.

Capacitor component and method of manufacturing the same

A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer.

Semiconductor device, method of manufacturing the same and power semiconductor device including the same

A power semiconductor device may include: a base substrate including a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer disposed inside of one surface of the base substrate; a trench formed from one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a depth direction; a first insulation film disposed on a surface of the base substrate; and a first electrode disposed in the trench. A peak point of an impurity doping concentration of the diffusion layer in a transverse direction may be positioned in a region contacting a side surface of the trench.

Power semiconductor device and method of manufacturing the same

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Suwon-si, South Korea

Chang Soo Jang