Taiwan Semiconductor Manufacturing Comp. Ltd.

Ruentex Engineering & Construction Co., Ltd.

Chang-Sheng Tsao

Samuel Yin

Yen-Ming Chen

Lin-June Wu

Rong-Hui Kao

Lin-Ya Huang

Chi-Sheng Juan

Pin-Pin Teng

Chien-Lin Tseng

A semiconductor structure includes a substrate having a front surface and a back surface. The semiconductor structure further includes a first isolation structure extending from the front surface into the substrate, the first isolation structure having a depth Dfrom the front surface. The semiconductor structure further includes a second isolation structure extending from the front surface into the substrate, the second isolation structure having a depth Dfrom the front surface. The semiconductor structure further includes a first etching stop feature in the substrate and contacting the first isolation structure. The semiconductor structure further includes a second etching stop feature in the substrate and contacting the second isolation structure.

Semiconductor structure and image sensor

The present application relates to the structure of a load-bearing column and a factory using the same. The load-bearing columns comprise a first column, a second column and a third column. The first column is a reinforced concrete column and is arranged on the underground floor. The second column is a pre-fabricated reinforced concrete column on the ground floor and is fixed to the top of the first column. The third column is fixed to the top of the second column, wherein the third column comprises a steel column and a third reinforcing bar assembly which surrounds the circumference of the steel column and extends from the bottom of the steel column in an axial direction to a predetermined distance.

Structure of load-bearing columns and factory using the same

In a method of laying out abnormally-shaped grid decks, the abnormally-shaped grid decks refer to grid decks having a cut-out at the corner thereof. It is usually a problem when laying out abnormally-shaped grid decks because they will be off-balance when they are laid on the columns. Support frames are used to support the abnormally-shaped grid decks and keep them balanced and stable on the columns. However, the support frames may obstruct the working route used in construction. The method adopted in the present invention adds temporary beams to maintain the abnormally-shaped grid decks by balancing them on the columns before they are fixed and secured thereon, and thereafter the temporary beams will be removed. This method can prevent using support frames which may obstruct the working route under construction.

Method of paving abnormal-shaped grid decks

A method of forming a semiconductor structure includes implanting neutral dopants in a first region of a substrate to form a first etching stop feature, the first etching stop feature having a depth D. The method further includes implanting neutral dopants in a second region of the substrate to form a second etching stop feature, wherein the second etching stop feature has a depth D, and Dis different from D. The method further includes etching the substrate to form a first trench and a second trench, wherein the first trench and the second trench expose the first etching stop feature and the second etching stop feature, respectively. The method further includes filling the first trench and the second trench with a dielectric material.

Isolation structures and methods of forming the same

The present disclosure relates to a method to form a plurality of openings within a substrate with a single photo exposure and a single etch process. A photoresist layer is disposed over a substrate and aligned with a photomask, wherein the photomask comprises a transparent area, a grayscale area, and an opaque area. The photomask and substrate are exposed to radiation comprising a single illumination step to form a first 3-dimensional pattern within the photoresist layer. The 3-dimensional pattern comprises a first opening comprising a first thickness formed by transmitting the radiation through the transparent area with full intensity, and a second opening comprising a second thickness formed by transmitting the radiation through the grayscale area with partial intensity. The 3-dimensional pattern is transferred to form a plurality of openings of varying depths within the substrate through a single etch step.

Method to form multiple trenches utilizing a grayscale mask

A method of forming of a semiconductor structure has isolation structures. A substrate having a first region and a second region is provided. The first region and the second region are implanted with neutral dopants to form a first etching stop feature and a second stop feature in the first region and the second region, respectively. The first etching stop feature has a depth Dand the second etching stop feature has a depth D. Dis less than D. The substrate in the first region and the second region are etched to form a first trench and a second trench respectively. The first trench and the second trench land on the first etching stop feature and the second etching stop feature, respectively.

An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.

Growing community of inventors

Taipei, Taiwan

Chang-Sheng Tsao