Seoul Viosys Co., Ltd.

Seoul Opto Device Co., Ltd.

Chang Seok Han

Hyo Shik Choi

Kyung Hae Kim

Woo Chul Kwak

Sang Joon Lee

Duck Hwan Oh

Jung Hwan Hwang

Chang Geun Jang

Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

UV light emitting device

A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

Light emitting diode having barrier layer of superlattice structure

Growing community of inventors

Ansan-si, South Korea

Chang Seok Han