Hyundai Electronics Industries Co. Ltd.

Chang Seo Park

Hyeon Soo Kim

You Sung Kim

Chan Lim

Kyong Min Kim

Han Sang Song

Hyung Bok Choi

Ki Seon Park

The present invention relates to a semiconductor technology and more specifically to a method of fabricating a gate electrode of a semiconductor device, where a re-oxidation process that may cause an abnormal oxidation can be eliminated. In a polysilicon/silicide structure or polysilicon/metal structure of gate electrode, a step of etching side parts of gate electrode is performed without any etch mask after gate patterning. Here, the etch can be made by wet or dry etch using an etchant having high selectivity of polysilicon film to a gate oxide film, so that the damaged gate oxide part during the gate patterning is allowed not to make a role of the gate insulating film itself, thereby eliminating the re-oxidation process.

Method for fabricating a gate electrode of a semiconductor device

There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta O film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta O film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta O film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta O film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta O film on the metal layer, wherein the process of depositing the Ta O film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta O film.

Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer

The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta,O,to form a dielectric film in a Ta,O,capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO,film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta,O,dielectric film and then performing deposition and thermal process of Ta,O,to form a Ta,O,dielectric film. As a good WO,film is formed on the surface of the underlying tungsten electrode before forming a Ta,O,dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta,O,dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO,film could be prevented, thereby improving the characteristic of the leak current of the Ta,O,capacitor.

Method of manufacturing a capacitor in a semiconductor device

The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO,film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO,film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH,OH solution. The effective removal of the WO,film reduces the contact resistance between a conductive material layer to be formed in the contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO,film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.

Method of manufacturing a semiconductor device capable of reducing contact resistance

The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO.sub.3 film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO.sub.3 film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH.sub.4 OH solution. The effective removal of the WO.sub.3 film reduces the contact resistance between a conductive material layer to be formed in he contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO.sub.3 film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.

Method of manufacturing a semiconductor device capable of reducing

A method for fabricating a semiconductor device is characterized by using a mixture chemical comprising ozone gas, anhydrous HF gas and deionized water vapor as an etchant for etching an oxide- and silicon-exposed wafer, whereby the etch selection ratio of oxide to silicon can be controlled according to necessity, so that the production yield and reliability of semiconductor device are improved. During etching of a wafer with exposed thermal oxide and exposed silicon, the etch rate ratio of oxide to silicon is controlled by changing the relative flow rates of the ozone gas, anhydrous HF gas and deionized water vapor.

Growing community of inventors

Ichon-shi, South Korea

Chang Seo Park