Cheil Industries Inc.

Hpk Inc.

Kabon Material Inc.

Deca Material Inc.

Chang Se Woo

Kap Seung Yang

Chang Hyun Cho

Chang Ha Lim

Tae Ho Kim

Dong Seon Uh

Jong Seob Kim

Sung Jae Lee

Hee Jae Kim

Hyun Hoo Sung

Sang Geun Yun

Sun Ho Choe

Eun Ji Kim

Hong Min Kim

Chung Hyung Joh

Kyung Ae Oh

Jin Hee Bae

Disclosed is a method of manufacturing a composite anode material for a lithium secondary battery containing nano-sized silicon and a carbonaceous material through a single process, the method including mixing a carbonaceous material and solid silicon and performing carbothermal shock for rapidly heating the carbonaceous material so that the solid silicon is melted using the heated carbonaceous material and is dispersed and attached in the form of particles to the surface of the carbonaceous material, the size of the silicon particles, which grow on the surface of the carbonaceous material, being adjusted during the carbothermal shock. Accordingly, processing costs can be lower than conventional methods of manufacturing silicon nanoparticles, and manufacturing costs can be further reduced by simultaneously performing formation of the silicon nanoparticles and compounding with the carbonaceous material.

Method of manufacturing composite anode material and composite anode material for lithium secondary battery

Provided is a method of producing a carbon fiber, the method including: a) adding an acrylonitrile-based polymer solution to a solution containing a glycol-based compound having a boiling point of 180 to 210&#xb0; C. to precipitate an acrylonitrile-based polymer; b) melt spinning the acrylonitrile-based polymer to obtain a spun fiber; and c) performing stabilization and carbonization on the spun fiber to obtain a carbon fiber.

Method of producing carbon fiber

A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.

Compound for gap-filling of semiconductor device and coating composition using the same

A compound for filling small gaps in a semiconductor device, a composition for filling small gaps in a semiconductor device, and a method of fabricating a semiconductor capacitor, the compound including hydrolysates prepared by hydrolysis, in the presence of an acid catalyst, of compounds represented by Formulae 1, 2, and 3:[RO]Si&#x2014;[CH]R'&#x2003;&#x2003;(1)wherein, in Formula 1, n is an integer from 0 to about 10, and R and R&#x2032; are each independently a hydrogen atom, a C1-C12 alkyl group, or a C6-C20 aryl group;HOOC[CH]RSi&#x2014;O&#x2014;SiR&#x2032;[CH]COOH&#x2003;&#x2003;(2)wherein, in Formula 2, each n is independently an integer from 0 to about 10, and R and R&#x2032; are each independently a C1-C12 alkyl group or a C6-C20 aryl group; andRSi&#x2014;O&#x2014;X&#x2003;&#x2003;(3)wherein, in Formula 3, X is R&#x2032; or SiR&#x2032;, and R and R&#x2032; are each independently a C1-C12 alkyl group or a C6-C20 aryl group, or a polycondensate prepared by polycondensation of the hydrolysates represented by Formulae 1, 2, and 3.

Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor

Growing community of inventors

Hwaseong-si, South Korea

Chang Se Woo