Hynix Semiconductor Inc.

Chang-Rock Song

Hyung-Bok Choi

The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention includes the steps of forming a contact hole in an insulating layer formed on a substrate; forming a plug in the contact hole, wherein the plug contains a nitride layer; forming a seed layer on the insulating layer and in the contact hole; forming a sacrificial layer including a trench overlapped with the contact hole; forming a Ru bottom electrode in the trench with electrochemical deposition; removing the sacrificial layer and exposing the Ru bottom electrode, wherein the seed layer not covered with the Ru bottom electrode is exposed; removing the exposed seed layer; forming a dielectric layer on the Ru bottom electrode; and forming a top electrode on the dielectric layer.

Method for fabricating capacitor using electrochemical deposition

Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH ) (NO ) solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a substrate; b) forming a plug including nitride in the contact hole; c) forming a Ru seed layer in the contact hole and on the insulation layer; d) forming a sacrificial layer including an open area overlapped with the contact hole on the Ru seed layer; e) forming a Ru layer for an electrode of the capacitor in the open area by performing electrochemical deposition; f) removing the sacrificial layer, whereby the Ru seed layer not covered with the Ru layer is exposed; and g) etching the exposed Ru seed layer by using an aqueous solution including Ce(NH ) (NO ) .

Method for fabricating capacitor using electrochemical deposition and wet etching

Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti Hf N layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti Hf N layer; and forming a HfO layer on an interface between the electrode layer and the Ti Hf N layer by performing a thermal treatment in an oxygen gas-containing atmosphere.

Method of fabricating capacitor having hafnium oxide

The disclosure relates to a method for fabricating a capacitor that prevents a rise in the production cost and complexity of production processes caused by performing deposition and subsequent treatment thereof whenever a layer is formed. The disclosure provides a method for fabricating a capacitor, including the steps of: forming a Ti Zr N layer on a substrate, wherein x is in the range of 0 to 0.5, inclusive; forming an electrode layer on the Ti Zr N layer; and forming a ZrO layer on an interface between the electrode layer and the Ti Zr N layer by performing a thermal treatment in an atmosphere containing oxygen gas, whereby a capacitor having a bottom electrode formed with the Ti Zr N layer, a dielectric layer formed with the ZrO layer, and a top electrode formed with the electrode layer is fabricated.

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Ichon-shi, South Korea

Chang-Rock Song