Hynix Semiconductor Inc.

Chang Rock Song

Cheol Hwan Park

Dong Su Park

Tae Hyeok Lee

Sang Ho Woo

The present invention discloses methods for manufacturing a capacitor of a semiconductor device employing doped silicon film as an electrode and an oxide film-nitride film-oxide film as a dielectric film. An interlayer insulating film is formed on a semiconductor substrate. A storage electrode is formed consisting of a doped polysilicon on the interlayer insulating film. A first oxide film is formed on the storage electrode that is subjected to a thermal treatment in an atmosphere containing an n-type impurity to implant the impurity into the first oxide film. A nitride film is formed on the first oxide film, whereby the impurity in the first oxide film is diffused into the nitride film. A second oxide film is formed on the nitride film. A plate electrode is then formed on the second oxide film.

Method for manufacturing a capacitor of a semiconductor device

Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of the substrate, depositing a nitride spacer layer on the buffer oxide layer, depositing an oxide spacer layer on the nitride spacer layer, forming an oxide spacer at the peripheral region of the substrate, and removing the oxide spacer layer remaining in the cell region. The annealing step is additionally carried out after depositing the buffer oxide layer so as to improve the interfacial surface characteristic and film quality, so that oxide etchant is prevented from penetrating into the silicon substrate during the wet dip process. Unnecessary voids are prevented from being created in the silicon substrate.

Method of manufacturing semiconductor device

In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.

Method of fabricating dielectric layer

A method of manufacturing a capacitor in semiconductor devices, the method comprising forming a silicon oxide film on a surface of a silicon substrate; forming a nitride film on said silicon oxide film; forming a contact hole; depositing a doped polysilicon layer; performing an etch-back process to remove a portion of said doped polysilicon layer; forming an ohmic contact layer over said doped polysilicon layer in said contact hole; forming an anti-diffusion film on said ohmic contact layer; forming a silicate glass film; forming a concave hole by etching a portion of said silicate glass film; forming a Ruthenium lower electrode on said internal wall of said concave hole; forming a BST dielectric film on said first Ruthenium electrode; crystallizing said BST dielectric film; forming an upper electrode on said BST dielectric film, thereby forming a capacitor; and performing a thermal treatment to stabilize said capacitor.

Growing community of inventors

Kyoungki-do, South Korea

Chang Rock Song