Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Chang-Oh Jeong

Je-Hun Lee

Beom-Seok Cho

Do-Hyun Kim

Yang-Ho Bae

Myung-Koo Hur

Eun-Guk Lee

Byeong-Beom Kim

Jang-Soo Kim

Mun-Pyo Hong

Chi-Woo Kim

Yang-Sun Kim

Young-Jae Tak

Pil-Sang Yun

Chun-Gi You

Jae-Gab Lee

Dong-Hoon Lee

Hong-Sick Park

Chong-Chul Chai

Sung-Jin Kim

Sang-Gab Kim

Ki-Won Kim

Shi-Yul Kim

Jong-Soo Yoon

Byeong-Jin Lee

Jean-Ho Song

Joo-Ae Youn

Sun-Young Hong

Hee-Joon Kim

Bong-Joo Kang

Hong-Long Ning

Sung-Hoon Yang

Woo-Geun Lee

Young-Wook Lee

Jae-Ho Choi

Bong-Kyun Kim

Jong-Hyun Choung

Hwa-Yeul Oh

Yong-Mo Choi

Hee-Hwan Choe

Byoung-June Kim

Kyung-Seok Son

Joon-Yong Park

Sang-Won Shin

Hyung-Jun Kim

Dong-Gyu Kim

Jae-Hong Kim

Woon-Yong Park

Min-Seok Oh

Tae-sang Kim

Jong-In Kim

Joo-han Kim

Jae-Hyoung Youn

Dong-Ju Yang

Seung-Jae Jung

Won-Suk Shin

Woon-yong Park

Woo-Sung Sohn

Ki-Yeup Lee

Jae-kyeong Lee

Tae-Hyung Ihn

Honglong Ning

Nam-Seok Suh

Soon-Kwon Lim

Hong Long Ning

Su-Kyoung Yang

Kyung-Seop Kim

Xin-Xing Li

Hyun-Ju Kang

Dae-Young Lee

Beohm-Rock Choi

Seung-Ha Choi

Kap-Soo Yoon

Suk-Won Jung

Hyeong-Suk Yoo

Sang Won Shin

Ji-Young Park

Jin-Su Byun

Jung-soo Rhee

Sung-Haeng Cho

Nam-Deog Kim

Hee-Tae Kim

Kyoung-Jae Chung

O-Sung Seo

Il-Yong Yoon

Dong-Min Lee

Sung-hoon Yang

So-Woon Kim

Jae-Hoon Chung

Yeon-Hong Kim

Sang-Woo Sohn

Jong-Sun Lim

Jin Ho Hwang

Woo Song Kim

Je-hun Lee

Sun-young Hong

Yong-Ho Bae

Myung-Mo Sung

Hee-Jung Yang

Chua-Gi You

An electrostatic chuck and a substrate processing apparatus including the same are disclosed. In one aspect, the electrostatic chuck includes a stage configured to support a substrate including a panel formation region and a dummy region surrounding the panel formation region. The electrostatic chuck includes a substrate fixing unit including a plurality of electrode patterns insulated from the substrate and spaced apart from one another, the substrate fixing unit at least partially overlapping the dummy region of the substrate and not overlapping the panel formation region of the substrate.

Method of fixing substrate using electrostatic chuck and substrate processing apparatus including the same

A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.

Thin film transistor substrate and display panel having the same

A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Sputtering device

A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Metal wire, thin-film transistor substrate and method for manufacturing a thin-film transistor substrate

A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.

Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same

A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

Thin film transistor array panel and method for manufacturing the same

A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.

Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate

A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280&#xb0; C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.

Thin film transistor display panel and manufacturing method thereof

A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor ('TFT') connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.

Display panel

A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.

Liquid crystal display and method of fabricating the same to have TFT's with pixel electrodes integrally extending from one of the source/drain electrodes

Thin film transistor display panel having a gate wire with different thicknesses and manufacturing method thereof

A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

Thin film transistor substrate and method of fabricating the same

A sputtering target apparatus is provided. The sputtering target apparatus includes a first target assembly including a first target array having a first target, a second target disposed adjacent to the first target, and a first target dividing region disposed between the first and second targets, the first target assembly extending along a first direction, wherein the first target dividing region has a longitudinal cross-section that is oblique with respect to the first direction.

Sputtering target apparatus

A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.

Method of fabricating thin-film transistor substrate

Growing community of inventors

Suwon-si, South Korea

Chang-Oh Jeong