Hannstar Display Corporation

Chang-Ming Chao

Mu-Kai Kang

Hsien-Tang Hu

Jui-Chi Lai

Chia-Hua Yu

Chien-Hao Wu

Rong-Bing Wu

Po-Hsiao Chen

A pixel substrate and a fabrication method thereof are provided. The method includes: forming a gate and a lower pad on a substrate; forming a gate insulating layer overlaying the gate and the lower pad; forming a channel layer and a first electrode layer on the gate insulating layer, in which the projection areas of the channel layer and the gate on the substrate are overlapped; forming an etching-barrier material layer on the substrate and simultaneously forming a contact opening at the gate insulating layer to expose the lower pad; forming a source, a drain and an upper pad on the substrate; forming a protective layer; forming a second electrode layer with multiple slits on the protective layer, in which one of the first and second electrode layers is electrically connected to the drain. The invention can simplify the process steps and reduce fabrication time.

Pixel substrate and fabrication method thereof

The pixel structure includes a scan line, a data line, a thin-film transistor, a first electrode layer, a protective layer and a second electrode layer. The thin-film transistor is electrically connected to the scan line and the data line, and includes a gate, an oxide semiconductor layer, an insulating layer, a source and a drain. The first electrode layer is in the same layer as the oxide semiconductor layer, and is surrounded by the scan line and the data line. The second electrode layer is located on the first electrode layer, and the protective layer is located between the first electrode layer and the second electrode layer, wherein one of the first and second electrode layers is electrically connected to the thin-film transistor, and the other is connected to a common voltage. The second electrode layer includes a plurality of slits exposing an area of the first electrode layer.

Pixel structure and fabricating method thereof

A method for manufacturing pixel structure is provided. A patterned conductor layer including a gate, a scan line and a conductor pattern is formed on a substrate. A gate insulating layer, a metal oxide material layer and an etching stop material layer are formed on the substrate. Using the patterned conductor layer as mask, a patterned photoresist layer is formed on the etching stop material layer through a back exposure process. Using the patterned photoresist layer as mask, a metal oxide channel layer and an etching stop layer are formed above the gate. A source and a drain are formed on the etching stop layer. A passivation layer is formed on the substrate. A halftone mask is used to form a photosensitive layer on the passivation layer. The metal oxide material layer and the etching stop material layer on the scan line and the conductor pattern are removed.

Method for manufacturing pixel structure

Growing community of inventors

Taichung, Taiwan

Chang-Ming Chao