Ajou University Industry-Academic Cooperation Foundation

Smart Electronics Inc.

Chang-Koo Kim

Jun-Hyun Kim

Jin-Su Park

Doo Won Kang

Hyun Chang Kim

Hae-Min Lee

Sung-Woon Cho

Hae-min Lee

Sang-Hyun You

Chang-Jin Park

Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.

Plasma etching method

A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:

A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.

Plasma etching method using pentafluoropropanol

Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.

Plasma etching method using perfluoropropyl carbinol

A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.

Plasma etching method using perfluoroisopropyl vinyl ether

Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

Method for manufacturing surge absorbing device

The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.

Structure having low reflectance surface and method for manufacturing the structure, and solar cell and optical film having the structure

Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.

Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.

There is provided a method for manufacturing a flexible electrode, the method comprising: cleaning a plastic substrate; forming a metal-oxide seed layer on the plastic substrate by sputtering a metal oxide on the plastic substrate; and forming a metal plating layer on the metal oxide seed layer using an electroless plating.

Method for manufacturing flexible electrode using sputtering process

The present invention provides a method for fabricating slanted copper nanorods. The method includes manufacturing a workpiece configured to include an etch stop layer on a wafer, placing the workpiece in a slanted position, and etching the slanted workpiece, forming a copper (Cu) layer on the slanted workpiece by plating, removing an over-plated portion from the copper layer, and removing a polysilicon (poly Si) excluding copper from the surface of the workpiece. According to the invention, copper nanorod structures having a uniform array can be fabricated in a large area at a high process yield compared to conventional methods. In addition, the angle and diameter of copper nanorods can be controlled as desired so that the applicability thereof can be greatly increased. Moreover, the present invention can be applied to processes for fabricating various devices, including semiconductor devices, MEMSs (microelectromechanical systems), optical devices, gas sensors, display devices, etc.

Growing community of inventors

Seoul, South Korea

Chang-Koo Kim