Applied Materials, Inc.

Chang Ke

Lei Zhou

Liqi Wu

Paul F Ma

Michael Sterling Jackson

Cheng Pan

Biao Liu

Song-Moon Suh

Erica Chen

Yuanhong Guo

Changgong Wang

Zhili Zuo

Ludovic Godet

David P Thompson

Tobin Kaufman-Osborn

Shuyi Zhang

Srinivas D Nemani

Mei Yin Chang

Jeffrey W Anthis

Vibhu Jindal

Cheng-Hsiung Matt Tsai

Wen Xiao

Benjamin Schmiege

Shuwei Liu

Guoqiang Jian

Wenyu Zhang

Bonnie T Chia

Pratham Jain

David Langtry

Certain embodiments of the present disclosure relate to a gas flow valve. The gas flow valve includes a housing configured to receive a flow of gas. The gas flow valve further includes a plunger configured to move between a closed position and one or more open positions within the housing. The gas flow valve further includes a position sensor configured to measure a distance associated with a difference in position of the plunger between the closed position and the one or more open position. The gas flow valve further includes a force sensor coupled to the plunger and configured to measure a force exerted by the plunger in the closed position on a sealing surface.

Gas flow valve and methods of operating thereof

A distribution unit of a particle detection system initiates a particle collection process to dislodge one or more surface particles from a surface of an article based on a stream including at least one of solid COparticles or COdroplets. The dislodged surface particles are collected on a surface of a substrate having a pre-determined initial state including initial surface particles of the substrate. A measurement indicating a particle number concentration of detectable surface particles on the substrate after the particle collection process is completed is obtained. An initial particle number concentration of the initial surface particles of the pre-determined initial state is identified. A number of particles transported away from the surface of the article is determined based on the obtained measurement and the identified initial particle concentration.

Detection of surface particles on chamber components with carbon dioxide

Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Methods for selective deposition using self-assembled monolayers

A stream including at least one of solid COparticles or COdroplets is directed toward an article including surface particles. The stream causes at least a portion of the surface particles on the article to dislodge from a surface of the article. A purge cycle to transport at least a portion of the dislodged surface particles away from the surface of the article is initiated. The purge cycle includes generating a laminar flow at a first velocity for a first time period and subsequently generating a laminar flow at a second velocity for a second time period. A determination is made of whether a number of particles transported away from the surface of the article satisfies a particle criterion. In response to a determination that the number of particles transported away from the article does not satisfy the criterion, the purge cycle is re-initiated.

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

Wafer treatment for achieving defect-free self-assembled monolayers

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

Methods for enhancing selectivity in SAM-based selective deposition

Methods and apparatus for supporting a substrate are provided herein. In some embodiments, a substrate support to support a substrate having a given diameter includes: a base ring having an inner diameter less than the given diameter, the base ring having a support surface configured to contact a first surface of the substrate and to form a seal between the support surface and the first surface of the substrate, when disposed atop the base ring; and a clamp ring having an inner diameter less than the given diameter, wherein the clamp ring includes a contact surface proximate the inner diameter configured to contact an upper surface of the substrate, when present, and wherein the clamp ring and the base ring are further configured to provide a bias force toward each other to clamp the substrate in the substrate support.

Substrate support with edge seal

Disclosed herein is a method comprising directing, from a distribution unit, a stream comprising at least one of solid COparticles or COdroplets toward an article, wherein the article comprises a plurality of surface particles, and wherein the stream comprising at least one of solid COparticles or COdroplets causes at least a portion of the plurality of surface particles on the article to dislodge from the surface of the article; collecting, on a surface of a substrate having a pre-determined initial state comprising initial surface particles on the surface of the substrate or a real-time aerosol sampling unit, at least some of the portion of the plurality of surface particles dislodged from the surface of the article; analyzing the surface of the substrate after performing the collecting; and determining at least one of a size, a morphology, a chemical composition, a particle number concentration, or a particle size distribution of the portion of the plurality of surface particles that were dislodged from the surface of the article and collected on the surface of the substrate.

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.

Extreme ultraviolet mask absorber and processes for manufacture

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition

Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

Enhanced selective deposition process

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

Growing community of inventors

Sunnyvale, CA, United States of America

Chang Ke