Macronix International Co., Ltd.

Chang-Ju Chen

Chun-Jung Lin

Ful-Long Ni

A MROM memory cell structure for storing multi level bit information is disclosed. First of all, a substrate is provided. The substrate has first and second trenches therein, wherein the first trench is deeper than second trench. A conformnal dielectric layer formed on sidewall and bottom of the first and second trenches. A conductive layer filled in the first and second trenches and on the substrate. A first doped region is formed under the first trench. A second doped region is formed under the second trench. A third doped region is formed in surface of the substrate and between the first and second trenches.

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Hsin-Chu, Taiwan

Chang-Ju Chen