Lg Semicon Co., Ltd.

Chang-Jin Lee

Chang-Man Khang

A word line driving circuit for a semiconductor memory is provided that drives a corresponding word line of a first number of word lines coupled to a plurality of memory cells based on a memory address signal generated from a more significant controller. The memory cells have a matrix form of rows and columns and the first number of word lines are divided into a second number of word line groups. The word line driving circuit includes a second number of word line group driving circuits each respectively coupled to one of the second number of word line groups to drive one of the word lines in the word line group selected by a control signal. A word line selecting circuit determines which of the second word line groups contain the corresponding word line to be driven using the memory address signal and generates the control signal for the corresponding word line group driving circuit.

Growing community of inventors

Seoul, South Korea

Chang-Jin Lee