Skhynix Inc.

Chang-Hyup Shin

Min-Suk Lee

A method of manufacturing an electronic device including a semiconductor memory is provided. The method may include forming a material layer for forming a variable resistance element over a substrate, forming a metal layer over the material layer, forming a mask pattern over the metal layer, forming a metal layer pattern by etching the metal layer using the mask pattern as an etch barrier, performing a surface treatment on the metal layer pattern, and etching the material layer using the metal layer pattern and the metal compound layer as an etch barrier to form a variable resistance element having an external side aligned with an external side of the metal compound layer. An external part of the metal layer pattern may be transformed into a metal compound layer. The metal compound layer may have a low etch rate as an etch barrier.

Method of manufacturing an electronic device including a semiconductor memory having a metal electrode and a metal compound layer surrounding sidewall of the metal electrode

This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a lower electrode, a variable resistance element over the lower electrode, an upper electrode disposed over the variable resistance element and including metal, and a metal compound layer configured to surround a side of the upper electrode. The metal compound layer includes a compound of the metal of the upper electrode.

Growing community of inventors

Icheon-si, South Korea

Chang-Hyup Shin