Samsung Electronics Co., Ltd.

Chang-hyun Park

Sung-cheol Lee

Kang Wook Kim

Yong-jae Yong

Jun-hwa Lee

Jae-jin Aum

Jun-hoo Choe

Jang-Keun Oh

Sang-jin Lee

Chang-bong Oh

Young-gun Ko

Hee-sung Kang

Jang-keun Kim

A vacuum cleaner includes a cleaner body including a suction source configured to generate a suction force, a suction inlet body configured to inhale dust on a surface to be cleaned using the suction force of the suction source, a dust bucket detachably installed on the cleaner body, a cyclonic unit formed inside the dust bucket and configured to centrifuge the dust from air flowed in through the suction inlet body, and a paper-shredder installed on a top of the dust bucket and configured to communicate with the top of the dust bucket so that shredded pieces of paper are dropped inside a dust collecting space of the dust bucket.

Vacuum cleaner having shredder

A vacuum cleaner includes a cleaner body having a suction source for generating a suction force; a suction nozzle assembly to draw in a dust or dirt from a surface to be cleaned by using the suction force of the suction source; a cyclone unit to separate the dust or dirt drawn in through the suction nozzle assembly from an air; a dust bin detachably disposed to the cleaner body to collect the dust or dirt separated at the cyclone unit; and a shredder to shred a paper, the shredder being detachably communicated with an opening of the dust bin to collect the shredded paper into the dust bin.

MOSFETs with pocket regions are fabricated. A gate electrode layer is formed on a semiconductor substrate; and lightly doped drain regions are formed in the semiconductor substrate adjacent the gate electrode layer. A blocking pattern is formed on the semiconductor substrate where the gate electrode layer is formed. The blocking pattern is adjacent and spaced apart from the gate electrode layer a predetermined distance and exposes portions of the semiconductor substrate adjacent sidewalls of the gate electrode layer. Pocket regions are formed in the semiconductor substrate by implanting impurity ions using the gate electrode layer and the blocking pattern as an ion implantation mask.

Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patterns

Growing community of inventors

Gwanju, South Korea

Chang-hyun Park