Suzhou Lekin Semiconductor Co., Ltd.

Lg Innotek Co., Ltd.

Chang Hyeong Lee

Sung Min Hwang

Byung Yeon Choi

June O Song

Chang Man Lim

Tae Sung Lee

Se Yeon Jung

Ki Seok Kim

Sun Woo Park

Gyu Hyeong Bak

Young Shin Kim

Yong Seon Song

Ju Hyeon Oh

A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings. The first electrode may include a first sub-electrode and a plurality of first branch electrodes, wherein the plurality of first branch electrodes are arranged extending toward the second electrode from the first sub-electrode; the second electrode may include a second sub-electrode and a plurality of second branch electrodes, wherein the plurality of second branch electrodes are arranged extending toward the first electrode from the second sub-electrode; and the plurality of first branch electrodes and the plurality of second branch electrodes may be alternately disposed on an upper surface of the reflective layer.

Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess

A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening. The second bonding pad may be electrically connected to the second electrode through the second opening.

Semiconductor device and semiconductor device package

A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer. The insulating reflective layer may be disposed on the first region, and an end portion of the insulating reflective layer may be disposed apart from an end portion of the first region.

Light emitting device including a passivation layer on a light emitting structure

The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

Growing community of inventors

Seoul, South Korea

Chang Hyeong Lee