Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Samsung Led Co., Ltd.

Chang Hwan Choi

Hyun Jun Kim

Yun Heub Song

Won Ha Moon

Jae Kyeong Jeong

Changsung Sean Kim

Han Kyung Bae

Hyeon Joo Seul

Kyung Ho Lee

Sun Choi

Choon Keun Lee

Jong Rip Kim

Dong Woohn Kim

Guen Hong Lee

Se Min Oh

Jeong Yeol Moon

Hoon Hee Han

Jong Ho Lee

Jin Ha Kim

Hee Soo Yoon

Dong Ik Shin

Young Nam Hwang

Sung Soo Park

Jong Pa Hong

Byeong Han Kim

Hong Chul Shin

Dong Hwan Lim

Joong El Kim

Jae Chul Yong

Jinuk Lee

Yu Rim Jeon

Bon Cheol Ku

Se Yeun Hwang

The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.

Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layer

Method for fabricating a semiconductor device

Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Three-dimensional semiconductor memory device, operating method of the same and electronic system including the same

Disclosed is a method of manufacturing a three-dimensional semiconductor memory device including a ferroelectric thin film. The method includes forming a mold structure including interlayer dielectric layers and sacrificial layers alternately stacked on a substrate, forming channel holes penetrating the mold structure, forming vertical channel structures inside the channel holes, forming an isolation trench penetrating the mold structure and having a line shape extending in one direction, selectively removing the sacrificial layers exposed by the isolation trench, forming gate electrodes filling a space from which the sacrificial layers are removed, and performing a heat treatment process and a cooling process for the vertical channel structures.

Three-dimensional semiconductor memory device including ferroelectric thin film and manufacturing method of the same

Disclosed are a three-dimensional tunneling field-effect transistor and a method of fabricating the same. A method of fabricating a three-dimensional tunneling field-effect transistor according to an embodiment of the present disclosure includes growing a buffer layer, an embedded source layer, an etch stop layer, an active source layer, a channel layer, and a drain layer on a substrate; depositing a metal layer on the drain layer, and then forming a pattern in a mesa structure shape; forming a vertical gate at one end of each of the etch stop layer, the active source layer, the channel layer, and the drain layer; isolating the active source layer from the substrate to form a first air bridge; isolating the drain layer from the substrate to form a second air bridge; and isolating the vertical gate from the substrate to form a third air bridge.

Three-dimensional tunneling field-effect transistor and method of fabricating the same

The present invention relates to a method of forming and transferring a thin film. The method of forming and transferring a thin film according to one embodiment may include a step of bonding a carrier wafer coated with a polymer bonding material to the top of a silicon-on-insulator (SOI) wafer formed by sequentially laminating a backside silicon layer, a buried oxide layer, and a silicon layer; a step of etching the backside silicon layer using the buried oxide layer as an etching barrier, and then selectively etching the buried oxide layer; a step of separating the carrier wafer from the polymer bonding material, and bonding a target wafer including an oxide layer to the bottom of the silicon layer through direct bonding; and a step of transferring the silicon layer to the top of the target wafer including the oxide layer by removing the polymer bonding material.

Method of forming and transferring thin film using SOI wafer and heat treatment process

Disclosed herein is a switched reluctance motor including: a shaft rotatably supporting the switched reluctance motor in an axial direction; a cylindrical part provided at a central portion of the shaft and movable vertically; an elastic member formed to enclose the shaft, formed from an upper portion of the shaft to an upper portion of the cylindrical part to thereby support a rise of the cylindrical part, and having elasticity; commutator segments attached to an outer peripheral surface of the cylindrical part and having a cylindrical shape; brushes contacting or not contacting the commutator segments according to vertical movement of the cylindrical part; and a propeller provided on a lower portion of the cylindrical part and pushing air at the time of rotation to thereby move the cylindrical part upwardly.

Switched reluctance motor having a vertical moving commutator

A method of manufacturing a flexible printed circuit board including determining an elastic modulus of a conductive portion and an elastic modulus of first and second dielectric portions, determining a thickness of the conductive portion and the first and second dielectric portions so that a neutral plane is located within a predetermined range of the thickness of the conductive portion, the neutral plane being substantially free from tension or compression in response to bending of the flexible printed circuit board, and insulating the conductive portion according to the determined thickness and the determined elastic modulus.

Method of manufacturing a flexible printed circuit board

Disclosed herein is a switched reluctance motor having a double rotor structure. An outer stator salient pole corresponding to an outer rotor salient pole is formed to have an 'E' shape by sequentially disposing a main salient pole, a first auxiliary salient pole, and a second auxiliary salient pole and an inner stator salient pole corresponding to an inner rotor salient pole is formed to have a pi (&#x3c0;) shape by sequentially disposing a first salient pole and a second salient pole, such that a magnetic flux path is reduced, thereby making it possible to prevent the loss of magnetic force.

Switched reluctance motor

There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Light emitting device

There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.

Chemical vapor deposition apparatus

A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.

Photonic crystal light emitting device using photon-recycling

An FPCB and a method of manufacturing the same, in which an electrical signal-conductive portion of the FPCB is subjected to little stress so as not to be broken by fatigue in spite of repeated bending of the FPCB, thereby increasing the lifetime of the FPCB.

Flexible printed circuit board and method of manufacturing the same

Growing community of inventors

Gyunggi-do, South Korea

Chang Hwan Choi