Samsung Electronics Co., Ltd.

Chang Hwa Kim

Sang Su Park

Beom Suk Lee

Tae Yon Lee

Jung Hun Kim

Gwi-Deok Ryan Lee

Sang Hoon Uhm

Dong Mo Im

Dae Won Ha

Hwi Chan Jun

Kwan Sik Kim

Man Geun Cho

Joon Young Kim

Min Jun Choi

Kyung Rae Byun

Sang Hoon Song

Eun Mi Kim

Jong Hyun Yoo

Jae Ho Kim

Sang-Su Park

Gang Zhang

Jae Kyu Lee

Gwi Deok Ryan Lee

Hong Ki Kim

Sang Chun Park

Jae Sung Hur

Kazunori Kakehi

Jin Hyung Kim

An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Image sensor and method for fabricating the same

A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.

Semiconductor device including contact structure

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

Image sensor and method of fabricating thereof

An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

Image sensor

An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

Image sensor including color filters

An image sensing device includes a photoelectric device disposed within a semiconductor substrate, and a separation structure and electrode structures disposed within the semiconductor substrate, and surrounding the photoelectric device. The separation structure includes a first conductive pattern, and a first insulating spacer between the first conductive pattern and the semiconductor substrate. A respective one of the electrode structures includes a second conductive pattern, and a second insulating spacer between the second conductive pattern and the semiconductor substrate. The first conductive pattern and the second conductive pattern are formed of the same conductive material.

Image sensing device

An image sensor may include a substrate having a plurality of pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the plurality of pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer to surround the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; and a color filter filling the trench. A protective film exposing the upper contact via, a first transparent electrode on the protective film and in contact with the upper contact via, and an organic photoelectric layer formed on the first transparent electrode may be provided.

Image sensor including color filters separated by two insulating layers and method of manufacturing the same

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Hwaseong-si, South Korea

Chang Hwa Kim