Auo Corporation

Au Optronics Corporation

Chang-Hung Li

Ming-Hsien Lee

Jui-Chi Lo

Hsien-Hung Su

Kuo-Yu Huang

Ming-Yao Chen

Shin-Shueh Chen

Ssu-Hui Lu

Maw-Song Chen

A thin film transistor includes a bottom gate, a semiconductor layer, a top gate, a first auxiliary conductive pattern, a source, and a drain. The semiconductor layer includes a first semiconductor region, a second semiconductor region, a first heavily doped region, a second heavily doped region, a third heavily doped region, a first lightly doped region, a second lightly doped region, and a third lightly doped region. The first heavily doped region and the second heavily doped region are respectively located on two sides of the first semiconductor region. Two ends of the second semiconductor region are directly connected to the third heavily doped region and the third lightly doped region, respectively. The top gate is electrically connected to the bottom gate. The source and the drain are respectively electrically connected to the third heavily doped region and the second heavily doped region of the semiconductor layer.

Thin film transistor

The present disclosure provides a sensing circuit, including a photo-sensing component, a first transistor, and a temperature-sensing component. The photo-sensing component is configured to receive a light and transmit a first current according to an intensity of the light. A gate terminal of the first transistor is configured to receive a first control circuit. The photo-sensing component and the first transistor are coupled in series between first and second nodes. The temperature-sensing component is coupled between the first and second nodes and is configured to generate a second current according to a temperature. The temperature-sensing component includes a channel structure, a first gate, a second gate, and a light-shielding structure. The channel structure is configured to transmit the second current.

Pixel circuit and temperature sensing circuit adjusting signals in the same

An active device array substrate includes: a substrate, a switch device, an inter-layer dielectric layer, an insulation bump, a conductive layer, and a pixel electrode. The switch device is located on the substrate. The inter-layer dielectric layer is located on the switch device, and the inter-layer dielectric layer has at least one opening, where the opening does not cover at least one part of a drain electrode of the switch device. The insulation bump covers at least partially the opening. The conductive layer is located on a top surface and a side wall of the insulation bump, and is electrically connected to the drain electrode of the switch device through the opening. The pixel electrode is electrically connected to the conductive layer.

Active device array substrate and display device using same

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Hsin-Chu, Taiwan

Chang-Hung Li