Epistar Corporation

Chang-Hua Hsieh

Chia-Ming Liu

Chi Shen

Wei-Chieh Lien

Ming-Pao Chen

Yung-Chung Pan

Chang-Yu Tsai

Ching-Chung Hu

Wen Hsiang Lin

Chi-Hsiang Yeh

Shuo-Wei Chen

Yen-Kai Yang

A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlGaN, the second layer includes AlGaN, wherein 0≤x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

Semiconductor device

A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.

Semiconductor device comprising electron blocking layer

A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Semiconductor device comprising electron blocking layers

A nitride-based semiconductor light-emitting device comprises a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region between the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure; and a substrate under the semiconductor buffer structure, wherein the semiconductor buffer structure comprises an un-doped first layer under the un-doped AlGaN layer, and an un-doped second layer between the un-doped first layer and the substrate, and wherein the thickness of the un-doped first layer is thicker than that of the un-doped second layer and the un-doped AlGaN layer.

Nitride-based semiconductor light-emitting device

A nitride-based semiconductor light-emitting device includes a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure.

Growing community of inventors

Hsinchu, Taiwan

Chang-Hua Hsieh