Samsung Electronics Co., Ltd.

Chang-Hoon Jeon

Makoto Yoshida

Hui-Jung Kim

Se-Myeong Jang

Jae-Rok Kahng

Hyun-Ju Sung

Satoru Yamada

Jong-Man Park

Sang-Yeon Han

Si-Ok Sohn

In methods of fabricating a semiconductor device having multiple channel transistors and semiconductor devices fabricated thereby, the semiconductor device includes an isolation region disposed within a semiconductor substrate and defining a first region. A plurality of semiconductor pillars self-aligned with the first region and spaced apart from each other are disposed within the first region, and each of the semiconductor pillars has at least one recessed region therein. At least one gate structure may be disposed across the recessed regions, which crosses the semiconductor pillars and extends onto the isolation region.

Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby

In a fin field effect transistor (Fin FET) and a method of manufacturing the Fin FET, the Fin FET includes an active pattern inside which insulating layer patterns are formed, an isolation layer pattern enclosing a sidewall of the active pattern such that an opening exposing a sidewall of the active pattern located between the insulating layer patterns is formed, a gate electrode formed on the active pattern to fill the opening, impurity regions formed at portions of the active pattern adjacent to sidewalls of the gate electrode, an insulating interlayer covering the active pattern and the gate electrode and contact plugs formed through portions of the insulating interlayer and the active pattern adjacent to the sidewalls of the gate electrode such that the contact plug makes contact with the impurity region.

Semiconductor device including a fin field effect transistor and method of manufacturing the same

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Osan-si, South Korea

Chang-Hoon Jeon