Samsung Display Co., Ltd.

Chang Ho Yi

Tetsuhiro Tanaka

Hyun Min Cho

Seok Je Seong

Seung Hyun Lee

Ki Seong Seo

Sang Hoon Oh

Seung Gyu Tae

Yeong-Gyu Kim

Dong Hyeok Lee

Hyun Woo Kang

Jung Woo Ha

A display device includes a semiconductor layer on an opposite side to a light-blocking layer, the semiconductor layer including an active layer overlapping the light-blocking layer, a first gate insulator on an opposite side to a buffer film with the active layer therebetween, and a first gate electrode on an opposite side to the active layer with the first gate insulator therebetween, a side surface of the first gate insulator includes a first inclined portion contacting a first surface of the semiconductor layer, and a second inclined portion contacting the first inclined portion and the first gate electrode, and a first angle between the first surface of the semiconductor layer and the first inclined portion is less than a second angle between the first surface of the semiconductor layer and the second inclined portion.

Display device

A display device may include a first pixel column disposed on a substrate, a second pixel column adjacent to the first pixel column, a third pixel column adjacent to the second pixel column, and a first wiring, a second wiring, and a third wiring respectively and electrically connected to the first pixel column, the second pixel column, and the third pixel column. Each of the first wiring, the second wiring, and the third wiring may include a first line, a second line electrically connected to the first line, the first line and the second line being disposed on different layers, and a third line electrically connected to the second line, the first line, the second line, and the third line being disposed on different layers.

Display device with first, second, and third lines on different layers connected to form wiring

A display device includes a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of a driving transistor, a first gate insulating layer, a gate electrode of a driving transistor, a first electrode of a boost capacitor, a second gate insulating layer, a first interlayer insulating layer, an oxide semiconductor including a channel, a first electrode, and a second electrode of a second transistor, a channel, a first electrode, and a second electrode of a third transistor, and a second electrode of a boost capacitor, a third gate insulating layer disposed on the oxide semiconductor, a gate electrode of the second transistor overlapping the channel of the second transistor, a gate electrode of the third transistor overlapping the channel of the third transistor, and a second interlayer insulating layer disposed on the gate electrode of the second transistor and the gate electrode of the third transistor.

Growing community of inventors

Suwon-si, South Korea

Chang Ho Yi