Samsung Electronics Co., Ltd.

Chang-Ho Shin

Ki-Chul Chun

A boost voltage generating circuit of a semiconductor device includes a main pump circuit having a transfer transistor, the main pump circuit to boost a voltage of a boost node and to transfer charge from the boost node to an output node through the transfer transistor in response to at least one control signal, and an additional pump circuit configured to boost a voltage of a terminal of the transfer transistor.

Boost voltage generating circuit including additional pump circuit and boost voltage generating method thereof

Provided are a bitline driving circuit of an integrated circuit memory that enhances a precharge scheme and a sense amplification scheme and a bitline driving method. In the bitline driving circuit, a new scheme of precharging the bitlines to voltages greater than or smaller than a voltage VCCA/2 using an auxiliary circuit is used to increase a gate-source voltage of transistors included in each sense amplification circuit. Also, when cell data is 1 and 0, a dummy cell can maintain a voltage difference between the bitlines BL and BLB generated after charge sharing. Furthermore, a sense amplification circuit, which is controlled by an offset control circuit, can remove a threshold voltage offset between the transistors included in each sense amplification circuit. At this time, an auxiliary circuit is used to stabilize the voltage difference.

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Gyeonggi-do, South Korea

Chang-Ho Shin