Hynix Semiconductor Inc.

Chang-Heon Park

Seung-Jin Yeom

Sang-Soo Park

Sun-Hwan Hwang

Noh-Jung Kwak

Dong-Ryeol Lee

A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.

Semiconductor device with damascene bit line and method for manufacturing the same

A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.

Growing community of inventors

Gyeonggi-do, South Korea

Chang-Heon Park