Skhynix Inc.

Chang Han Son

Jung Hwan Lee

Kwang Ho Baek

Sung Hyun Hwang

In Gon Yang

Jae Hyeon Shin

Young Don Jung

Jung Mi Ko

The present technology relates to an electronic device. A memory device including a plurality of memory cells connected to a plurality of word lines arranged between a plurality of source select lines and a plurality of drain select lines, a peripheral circuit configured to perform a program operation of programming data in selected memory cells among the plurality of memory cells, and a program operation controller configured to control the peripheral circuit to apply a voltage, for turning on or off source select transistors connected to the plurality of source select lines, to the plurality of source select lines, while applying a pass voltage to the plurality of word lines after applying a program voltage to selected word lines connected to the selected memory cells.

Memory device and method of operating the memory device

The present technology relates to a memory device and method of operating the memory device. The memory device includes a plurality of memory cells, a peripheral circuit, and control logic. The peripheral circuit performs a plurality of program loops each including a program operation and a verify operation on selected memory cells of the plurality of memory cells. The control logic controls the peripheral circuit to increase a potential of selected bit lines.

Growing community of inventors

Icheon-si, South Korea

Chang Han Son