Samsung Electronics Co., Ltd.

Chang-han Choi

Du-Eung Kim

Byung-Gil Choi

Woo-Yeong Cho

Kwang-Jin Lee

Beak-Hyung Cho

Ki-sung Kim

Jong-Chul Park

Hye-jin Kim

Yu-hwan Ro

Ki-Won Lim

Ho-keun Cho

Jong-soo Seo

A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed.

Methods of operating phase-change random access memory devices

A PRAM includes a memory cell array of phase change memory cells, and a write circuit receiving an externally provided first voltage and supplying a write pulse for writing data to the memory cells in a normal operation mode. The write circuit also receives an externally provided second voltage higher than the first voltage and supplies a firing pulse to at least one firing-failed phase change memory cell.

PRAM and method of firing memory cells

Provided is a method of testing a phase change random access memory (PRAM). The method may include providing a plurality of PRAM cells each coupled between each of a plurality of first lines and each of a plurality of second lines intersecting the first lines, selecting at least one of the plurality of first lines while deselecting the remaining first lines and the plurality of second lines, pre-charging the selected at least one of the plurality of first lines to a predetermined or given voltage level, and sensing a change in the voltage level of the selected first line while supplying a monitoring voltage to the selected first line.

Phase change random access memory and method of testing the same

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Suwon-si, South Korea

Chang-han Choi