Korea Research Institute of Chemical Technology

Korea Institute of Science and Technology

Chang-Gyoun Kim

Ki-Seok An

Yun-Soo Kim

Taek-Mo Chung

Sun-Sook Lee

Young-Kuk Lee

Su-Jin Ku

Won-Yong Koh

Kyu-Sang Yu

Yunsoo Kim

Young-Min Choi

Ha-Kyun Jung

Dong-Ju Jeon

Ki-Jeong Kong

Jong-Sun Lim

Han-Sung Park

Seog-Jong Jeong

Won-Tae Cho

Seung-Ho Yoo

Bo-Keum Park

Kiwhan Sung

Sheby Mary George

Beyong-Hwan Ryu

Seung-Ho Yu

Hyun-Ju Chang

Jae-do Lee

Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Strontium precursor, method for preparing same, and method for forming thin film by using same

This invention relates to a method to induce growth of carbon nanotubes using a liquid phased-hydrocarbon based material under a critical range of equilibrating between liquid and gas phases, thereby easily manipulating a required carbon source. This invention also relates to a method to facilitate easy generation of a carbon backbone of the carbon nanotube because the reaction is performed in the presence of a metal nanoparticle or a metal compound capable of spontaneously generating a seed catalyst which stimulates the growth of carbon nanotubes as well as secures safety enough for the industrial application by using a mild reaction condition within the critical range. Accordingly, this invention can produce the carbon nanotube with high transition efficiency under a mild condition with a relatively lower temperature and pressure than those in conventional gas phased-methods without using a costly equipment, thereby cost-effectively producing the carbon nanotube in large quantities.

Method of preparing carbon nanotube from liquid phased-carbon source

Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.

Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition

A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Volatile nickel aminoalkoxide complex and deposition of nickel thin film using same

Volatile organogallium compound and deposition of gallium nitride film using same

A novel organometallic compound of formula M[(.mu.-OR').sub.2 M'R.sub.2 ].sub.2 can be vaporized at a low temperature and advantageously employed in the CVD of a heterometallic oxide film of the MM'.sub.2 O.sub.4 type, wherein M is a divalent element such as Be, Mg, Zn or Cd; M' is a Group 13 element such as Al or Ga; and R and R' are each independently a C.sub.1-10 alkyl group, with the proviso that if M is Mg, M' is not Al.

Volatile organometallic compound containing a divalent metal and a group

A novel organometallic compound of formula M[(.mu.-OR').sub.2 M'R.sub.2 ].sub.2 can be vaporized at a low temperature and advantageously employed in the CVD of a heterometallic oxide film of the MM'.sub.2 O.sub.4 type, wherein M is a divalent element such as Be, Mg, Zn or Cd; M' is a Group 13 element such as Al or Ga; and R and R' are each independently a C.sub.1-10, alkyl group, with the proviso that if M is Mg, M' is not Al.

Growing community of inventors

Daejeon, South Korea

Chang-Gyoun Kim