Hynix Semiconductor Inc.

Chang-Goo Lee

Sung-Yoon Cho

A method for fabricating a semiconductor device includes: forming a first photoresist pattern with a first opening over an etch target layer; forming a second photoresist pattern with a plurality of second openings over the first photoresist pattern; and forming a plurality of patterns by etching the etch target layer by using the first photoresist pattern and the second photoresist pattern as an etch barrier.

Method for fabricating semiconductor device

A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer over an etch target layer, forming first etch mask patterns having negative slopes over the first hard mask layer, thereby forming a resultant structure, forming a first material layer for a second etch mask over the resultant structure, performing a planarization process until the first etch mask patterns are exposed to form second etch mask patterns filled in spaces between the spacers, removing the spacers, and etching the first hard mask layer and the etch target layer using the first etch mask patterns and the second etch mask patterns.

Method for forming fine patterns in semiconductor device

A method for fabricating a semiconductor device includes forming an interlayer dielectric layer over a substrate; forming a dual storage node contact plug to be buried in the interlayer dielectric layer, forming a first damascene pattern to isolate the dual storage node contact plug, forming a protective layer pattern inside the first damascene pattern, etching the interlayer dielectric layer to form a second damascene pattern to be coupled to the first damascene pattern, and forming bit lines inside the first and second damascene patterns.

Method for fabricating semiconductor device with damascene bit line

Disclosed is a method for fabricating a cylinder type capacitor in a semiconductor device. Particularly, the cylinder type capacitor is fabricated through performing a series of processes. Among the serial processes, a cleaning process for removing a photosensitive layer remaining in undesired regions is performed before an etch-back process for forming bottom electrodes with use of the photosensitive layer as an etch mask. Especially, the cleaning process proceeds by employing one of a dry etching process and a wet etching process.

Growing community of inventors

Gyeonggi-do, South Korea

Chang-Goo Lee