Electronics and Telecommunications Research Institute

Chang Geun Ahn

Jong Heon Yang

Han Young Yu

Chil Seong Ah

In Bok Baek

Chan Woo Park

Tae Youb Kim

An Soon Kim

Moon Gyu Jang

Gun Yong Sung

Seon Hee Park

Seong Jae Lee

Myung Sim Jun

Ki Ju Im

Chul Huh

Kwang Hyo Chung

Do Hyun Kim

Seung Hwan Kim

Young Jun Kim

Yark Yeon Kim

Bong Kyu Kim

Won Ick Jang

Min Ki Ryu

Yong Sun Yoon

Jae Hun Choi

Sung Yool Choi

Yong Won Jang

Hyung Wook Noh

Bong Kuk Lee

Ung Hwan Pi

Hwin Dol Park

Byung Hoon Kim

Rae Man Park

Ji Eun Lim

Provided is a multi-port gas flow rate control apparatus. The multi-port gas flow rate control apparatus includes a gas supply chamber configured to supply a measurement gas input through one gas inflow channel while allowing the measurement gas to diverge into a plurality of flows, a plurality of gas divergence flow channels each having one side connected to the gas supply chamber and configured to transfer the measurement gas flowing through the gas supply chamber to a plurality of gas sensors, respectively, and a gas measurement chamber configured to accommodate the plurality of gas sensors, including the plurality of gas divergence flow channels configured to connect to the gas supply chamber to the plurality of gas sensors to transfer a gas outflow diverging through the gas supply chamber to the plurality of accommodated gas sensors, and configured to discharge the gas outflow sensed by the plurality of gas sensors.

Apparatus for controlling gas flow rates at multi-ports

A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Vibration device including support portion

Disclosed is a silicon nano crystal light emitting diode, including: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film.

Silicon nanocrystal light emitting diode and fabricating method thereof

There is provided an apparatus for irradiating a beam at a user's eye gaze point and an operation method thereof. The apparatus includes an eye gaze point detecting part analyzing a movement of a user's pupils and detecting the user's eye gaze point, and a beam irradiation part irradiating a beam at the user's eye gaze point detected by the eye gaze point detecting part. The apparatus detects the user's current eye gaze point and irradiates the beam at the user's detected eye gaze point, thereby allowing for the performance of desired control with greater accuracy.

Apparatus for irradiating beam at user's eye gaze point and operation method thereof

Provided is a sensing device, which includes a reactive material layer () responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (), the first electrode being disposed under the reactive material layer (), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer () is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

Sensing device

A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.

Biosensor using nanodot and method of manufacturing the same

Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

Three-dimensional nanodevices including nanostructures

A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

Semiconductor nanowire sensor device and method for manufacturing the same

Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.

Biosensor and method of driving the same

A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.

Detection device and system

Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.

Method of manufacturing semiconductor device

Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.

Semiconductor FET sensor and method of fabricating the same

Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Growing community of inventors

Daejeon, South Korea

Chang Geun Ahn