Eugene Technology Co., Ltd.

Chang Dol Kim

Sung Ho Kang

Yong Ki Kim

Sung Tae Je

Jae Woo Kim

Yang Sik Shin

Gyu Ho Choi

Byoung Gyu Song

Jun Jin Hyon

Hong Won Lee

Jeong Hee Jo

Jun Tae Kim

Kyoung Soo Kim

Sang Don Lee

Kyong Hun Kim

Kyoung Hun Kim

Suk Bum Yoo

Sang Young Oh

Choon Sik Jeong

Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes disposed to be spaced apart from each other, and an electrode protection part configured to protect the plurality of electrodes. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other, and a ground electrode provided between the first power supply electrode and the second power supply electrode. The electrode protection part includes a plurality of first electrode protection tubes provided in the first and second power supply electrodes, respectively, a second electrode protection tube provided in the ground electrode, and a plurality of connection tubes configured to connect each of the plurality of first electrode protection tubes to the second electrode protection tube so as to communicate with each other.

Batch type substrate processing apparatus

A substrate processing system includes: first and second process tubes spaced apart from each other in a first axial direction to provide process spaces independent from each other; a substrate boat on which a plurality of substrates are multiply stacked and which is provided to each of process spaces of the first and second process tubes; and first and second boat elevation units provided to the first and second process tubes, respectively, to elevate the substrate boat, wherein each of the first and second boat elevation units includes an elevation shaft member disposed in a space between the first and second process tubes.

Substrate processing system

Provided is a batch-type substrate processing apparatus which supplies, into a processing space, a process gas decomposed in a separate space. The substrate processing apparatus includes: a tube; a substrate support part; a gas supply pipe; an exhaust part; and a plasma reaction part, wherein the plasma part may include a plurality of power supply electrode parts and a ground electrode part.

Batch type plasma substrate processing apparatus

The present disclosure relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate, which is capable of allowing a substrate processing gas to smoothly flow on the substrate. The apparatus for processing the substrate in accordance an exemplary embodiment may form a laminar flow through a gas supply unit disposed on one side of an inner reaction tube and an exhaust duct disposed on the other side of the inner reaction tube, which faces the gas supply unit, to extend up to the outside of an accommodation region of a pedestal in an accommodation space of the inner reaction tube and control a flow of a substrate processing gas supplied onto the substrate.

Apparatus for processing substrate

A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.

Plasma processing apparatus having injection ports at both sides of the ground electrode for batch processing of substrates

The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same. The substrate processing apparatus in accordance with an exemplary embodiment includes a pre-chamber into a substrate is carried, a process chamber communicating with the pre-chamber and in which a substrate processing process is performed, a substrate boat including a plurality of partition plates that partition a loading space into which the substrate is loaded and to elevate, a gas supply unit configured to supply a process gas to the substrate through a plurality of injection nozzles provided in the process chamber, an exhaust unit configured to exhaust a gas through a plurality of suction holes defined in the process chamber, and a swap guide member provided in the pre-chamber and configured to place the substrate carried into the pre-chamber in the loading space that is partitioned by the plurality of partition plates.

Substrate processing apparatus and substrate processing method using the same

Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.

Substrate processing apparatus

The present invention may include: a tube providing an interior space in which substrates are processed; a substrate support portion stacking a plurality of substrates in the interior space of the tube in multi-level; a gas supply portion supplying a process gas to the plurality of substrates; an exhaust portion disposed to face the gas supply portion to absorb the process gas; and a flowage adjustment portion having spray openings formed along a circumference of the tube between the gas supply portion and the exhaust portion to spray an adjusting gas, and may be capable of controlling the amount of process gas supplied to an upper surface of the substrate by adjusting the flowage of process gas.

Growing community of inventors

Yongin-si, South Korea

Chang Dol Kim