Opto Tech Corporation

Opto Tech University

Chang-Da Tsai

Ming-Der Lin

Kwang-Ru Wang

Chia-Liang Hsu

Jung-kuei Hsu

Wen-Liang Tseng

San Bao Lin

Ching-Shih Ma

Yung-Chiang Hwang

Chui-Chuan Chang

Hung-Yuan Lu

Wei-Che Wu

Hsueh-Chih Yu

Chia-Chen Chang

Ching-Liang Kao

Yen-Hu Chu

A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Method for manufacturing a LED

A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Chip-bonding light emitting diode chip

The present invention discloses a light-emitting diode and a method for manufacturing such a light-emitting diode with a direct band-gap III-V compound semiconductor material on a GaAs substrate. It is implemented by forming a first conductive electrode on the top edge of the epitaxial LED layer and a second conductive electrode opposite the first conductive electrode on the edge of a transparent substrate. Further, after the first conductive electrode and second conductive electrode are connected by chip bonding skill, it is selectively to remove the GaAs substrate and plate a transparent electrode on the top portion of the epitaxial LED layer. Therefore, when casting from P-N junction of the light-emitting diode, the light will go through with directions of the top portion of epitaxial layer and transparent substrate.

Light-emitting diode with cavity containing a filler

A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.

Light-emitting diode with enhanced brightness and method for fabricating the same

The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

A forming method and a structure of a high efficiency electro-optics device are disclosed. In the present invention, the cell-fixing surface between the die carrier and the electro-optics cell is decreased to increase the light emitting and absorbing regions of the electro-optics device. Thus, the operating efficiency and the sensitivity of the electro-optics device is increased substantially. Especially, the present invention has the advantage of fully showing the efficacy of device using the transparent substrate. Furthermore, when the electro-optics cell is fixing on the cell-fixing surface by utilizing the eutectic or metal-melting bonding method, a result of self-alignment can be achieved. Thus, the accuracy of the packaging device is increased substantially, thereby reducing the loss caused by the failure of poor cell-fixing while in mass production and meanwhile increasing the accuracy of fixing cell. Therefore, the present technology is quite suitable for use in the packaging of high precision.

Structure and method for forming a high efficiency electro-optics device

A method for packaging an electro-optics device is disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Method for packaging a high efficiency electro-optics device

A method and a structure for packaging an electro-optics device are disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Growing community of inventors

Taoyuan, Taiwan

Chang-Da Tsai