International Business Machines Corporation

Chang-Ching Kin

Michael S Barnes

John C Forster

John H Keller

James Anthony O'Neill

Harris C Jones

John A Trumpetto

Michael A Fury

Melanie M Chow

Mark W Jones

John J Nahlik

Donald R Cowell

A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.

Selective fluorocarbon-based RIE process utilizing a nitrogen additive

An improved metal mask-making process is disclosed which involves starting with a metal mask having etched apertures using existing processes and coating it conformably with a substantially thick layer, so as to reduce the minimum aperture size while increasing the metal mask thickness. The conformal layer is chosen for minimum stress, good adhesion and thermal compatibility to the original metal mask material. Additional thin conformal coatings can be provided for imparting mechanical and chemical resistance to the metal mask.

High aspect ratio molybdenum composite mask method

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Poughkeepsie, NY, United States of America

Chang-Ching Kin