Samsung Electronics Co., Ltd.

Chang Bun Yoon

Chul Soo Yoon

Min Jung Park

Sang Hyun Kim

Seul Gee Lee

Hyong Sik Won

Jong Rak Sohn

Sang Hoon Ahn

Il Woo Park

Youn Gon Park

Jeong Rok Oh

Mi Hwa Yu

Soo Moon Park

Provided is a bonding wire for a semiconductor package and a semiconductor package including the same. The bonding wire for the semiconductor package may include a core portion including silver (Ag), and a shell layer surrounding the core portion, having a thickness of 2 nm to 23 nm, and including gold (Au). The semiconductor package may include a package body having a first electrode structure and a second electrode structure, a semiconductor light emitting device comprising a first electrode portion and a second electrode portion electrically connected to the first electrode structure and the second electrode structure, and a bonding wire connecting at least one of the first electrode structure and the second electrode structure to the semiconductor light emitting device.

Bonding wire for semiconductor package and semiconductor package including same

A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of the wavelength conversion unit and reflecting a partial amount of light emitted from the light emitting device and allowing a partial amount of light emitted from the light emitting device to be transmitted therethrough.

Semiconductor light emitting device package

A wavelength conversion structure comprises a sintered body comprising a mixture of a wavelength conversion material and a glass composition, wherein the wavelength conversion material comprises a phosphor and the glass composition comprises ZnO&#x2014;BaO&#x2014;SiO&#x2014;BO.

Wavelength conversion structure, apparatus comprising wavelength conversion structure, and related methods of manufacture

According to one embodiment of the present invention, a method for producing a sialon phosphor comprises: mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body; and mixing the first sintered body and a precursor for an active material and heat-treating the mixture to form a second sintered body. That is, the method for producing a sialon phosphor according to one embodiment of the present invention involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body. Eventually, the active material in the crystal structure of the first sintered body is located in an interstitial site not located in the Si or Al position, thereby preventing the degradation of the crystallinity of the first sintered body. In addition, the crystal structure of the sialon phosphor produced by the above-described method is stable, and the sialon phosphor exhibits superior thermal stability at a high temperature, and therefore the degradation in the efficiency thereof caused by a shortened lifespan thereof is extremely slight even over long-term operation. In addition, the crystal structure of the sialon phosphor in the light-emitting device package comprising the sialon phosphor produced by the above-described method is stable, and therefore the degradation in luminance caused by a degradation of crystallinity may be prevented.

Sialon phosphor, method for producing same, and light-emitting device package using same

There is provided a phosphor having a &#x3b2;-type SiNcrystal structure including oxynitride expressed by an empirical formula SiAlON:Eu,M, M being at least one selected from among strontium (Sr) and barium (Ba), an amount (a) of europium (Eu) ranging from 0.1 to 5 mol %, an amount (b) of M ranging from 0.1 to 10 mol %, and a composition rate (z) of aluminum (Al) satisfying 0.1&#x3c;z&#x3c;1, and the phosphor emitting light having a peak wavelength ranging from 500 to 550 nm when excitation light is irradiated thereto.

Fluorescent substance, light emitting device, surface light source device, display device and illuminating device

A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Growing community of inventors

Anyang-si, South Korea

Chang Bun Yoon